Microwave Effects in Narrow-Gap Semiconductors (II)

Absorption, Fluorescence Emission, and Photophysics of Squaraines

Electronic structure of pseudobinary semiconductor alloys InxGa1−x and InAsxSb1−x

The present study reports on experimental investigations about the phase velocity diagrams of Alfven waves in the anisotropic solid-state plasma of bismuth. Alfven-wave transmission at 34 GHz and 4.2 K has been observed, using an interference technique of high sensitivity. The experimental results are in good agreement with a theoretical model given by Buchsbaum, which makes only use of the anisotropic mass tensor of bismuth.

Propagation of Alfvén waves in bismuth

The propagation of electromagnetic waves in solids with electron and hole energy surfaces of second order placed in a magnetic field is investigated The deduced dispersion relation is compared with measurements of the Alfven wave velocity in bismuth The theoretical and experimental results are in good agreement In particular, it is clearly shown that for special orientations of the magnetic field switching from one mode to the other occurs Parameters of the energy surfaces of bismuth are given by fitting the theoretical curves to the measured phase velocity diagrams

Magnetoplasma waves in anisotropic semiconductors and semimetals

The intrinsic carrier concentration in InSb was determined, between 246 and 370 K, by a helicon method consisting of a microwave interferometer at 34 GHz. The accuracy of the carrier concentration is between 1–2%. The influence of experimental parameters on the determination of the carrier concentration and the mobilities of both electrons and holes is discussed in detail. Comparing the data obtained for the carrier concentration with Hall effect measurements a small difference of the absolute values is found. The band-gap deduced is in agreement with the Hall effect measurements.

H. Bernot

Papers

Determination of the intrinsic carrier concentration in InSb by helicon waves