Radiation damage is produced in a crystalline target whenever a moving ion transfers sufficient energy to a target atom to displace it from its lattice site. For conditions of practical importance in ion implantation, the radiation damage produced by the injected ions is severe, and the crystal must be carefully Annealed if the chemical effects of the implanted ions are to dominate the residual damage. The purpose of this paper is to review work that has been performed over the past several years in an effort to understand implantation-produced damage and its annealing characteristics, especially in silicon. The subject is developed as follows. A qualitative description of the damage produced by an implanted ion is presented in Section I, followed by a partial inventory of the basic defects that are found in ion-implanted silicon (Section II). The structure of individual damage clusters produced by both heavy and light ions is then described in Section III, where theoretical predictions are compared to a variety of experimental data. This is followed with a section on the depth distribution of defects and damage clusters (Section IV); and the paper is then concluded with a section on the annealing characteristics of implantation-produced damage (Section V). The development is organized to give primary emphasis to those facts and ideas that are essential for applications of ion implantation in the fabrication of MOS and junction devices in silicon. A future paper will review the state of the art in compound semiconductors.

Ion implantation in semiconductors&#8212;Part II: Damage production and annealing

Pre-amorphization damage in ion-implanted silicon

The damage produced in Si by high‐energy MeV ions and its low‐temperature annealing behavior are discussed. The damage morphology clearly shows that there are distinct regions in which different damage nucleation and growth mechanisms are dominant. A model is proposed to account for the observations. Both electron microscopy and Rutherford backscattering were used to characterize the damage distributions, while the annealing behavior of the damage helped in identifying some of the defects.

Damage nucleation and annealing in MeV ion-implanted Si

Proton channeling effect measurements were used to study the implantation lattice disorder in silicon as a function of ion flux (dose-rate), fluence, implant temperature, ion mass, and the presence of ionizing radiation. For both O+ and Sb+ implantation at 87°K the lattice disorder production is the same for equal total energy into atomic processes/cm3 at a fixed rate of energy into atomic processes/cm3-sec. The disorder production for both light (O+)and heavy (Sb+) ions exhibits a flux dependence at low temperatures and at room temperature. At low temperatures an increase in disorder is observed for increasing flux at constant fluences; however, for low fluence Sb implantation at 300°K, lower disorder is observed with increasing flux. The lattice disorder increases for all ions with decreasing implant temperature from 300°K down to temperatures as low as 38°K, but the variation with temperature is greater for lighter ions. The stimulation of lattice disorder annealing (typically ≍ 10 per cent) b...

Ionization, thermal, and flux dependences of implantation disorder in silicon

Damage formation and annealing of ion implantation in Si

Recent results have reported a strong implantation-temperature dependence between 125°K and room temperature for lattice disorder produced by 200-keV B implantation into Si. Using our previous annealing model incorporating implant temperature and dose rate, we have calculated a characteristic defect annealing time at the threshold of the crystalline to amorphous transition at 173°K for 1 μA/cm2 and find that it agrees very closely with that for neutral vacancy annealing. In addition, we have made measurements of the 1.8μ infrared absorption band, characteristic of the Si divacancy, following room temperature and 85°K implants of 400-keV B11 or Sb121 ions. Very few divacancies are observed immediately after 85°K implants, but annealing growth of divacancies occurs between 150 and 300°K yielding a density almost equal to that for the same ion Ruence at 300°K. These results strongly suggest that below 300°K neutral vacancy motion and trapping control both the implantation-temperature dependence of l...

H. J. Stein

Papers

Evidence for vacancy motion in low temperature ion-planted Si