A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

The present invention provides a structure of a printed circuit board and a manufacturing method thereof. The method includes: (a) forming a circuit pattern on an insulating layer in which a seed layer is formed; (b) embedding the circuit pattern into the insulating layer by a press method; and (c) removing the seed layer. According to the present invention, a fine pattern may be formed without occurring alignment problem by forming a circuit pattern directly on an insulating layer and reliability of the formed fine pattern may be increased by performing a process of embedding protruded circuits into the insulating layer. In addition, possibility of inferior circuit occurring due to ion migration between adjacent circuits may be reduced by performing over-etching a circuit layer to be lower than a surface of the insulating layer during the etching process of removing a seed layer.

Printed circuit board and manufacturing method thereof

PROBLEM TO BE SOLVED: To provide a method for manufacturing a polarizing plate which is capable of uniformly pressurizing a laminate (a polarizing film and a transparent film) constituting a polarizing plate even if using sticking rolls of which the diameter is relatively smaller, and an apparatus for manufacturing a polarizing plate.SOLUTION: A method for manufacturing a polarizing plate includes: an adhesive coating process for applying an active energy ray curable adhesive to one surface of a transparent film or to one surface or both surfaces of a polarizing film; a sticking process for sticking the transparent film and the polarizing film by pressing at least one of a pair of sticking rolls toward a direction of the other sticking roll by using at least one pressing roll provided in contact with the sticking rolls in a state where a laminate formed by laminating the transparent film on one surface or both surfaces of the polarizing film via the adhesive is interposed between the pair of sticking rolls rotating in a conveyance direction; and an active energy ray irradiation process for curing the adhesive by irradiating the laminate with the active energy ray. A diameter of the center part of the pressing roll is larger than a diameter of the center part of the sticking rolls in contact with the pressing roll.

Method for manufacturing polarizing plate

A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550°C) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.

Method and apparatus for forming a high quality low temperature silicon nitride layer

A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.

Semiconductor memory device.

PROBLEM TO BE SOLVED: To enlarge the surface area of a capacitor storage electrode to increase capacitance of a fine-structured and integrated semiconductor device for memory SOLUTION: As a preparative layer of a capacitor storage electrode 25 formed on a semiconductor device, two or more layers of films each containing impurity in different density or different material are formed An aperture is provided by selectively removing a predetermined area of the preparative layer and etching is performed Due to the different etch rates in the preparative layer, the sidewall surface of the aperture is bellows-shaped After a conductive film is deposited on the sidewall surface of the aperture to form the capacitor storage electrode 25, the preparative layer is removed Furthermore, a capacitor dielectric film 26 and a capacitor counter electrode 27 are formed on the capacitor storage electrode 25 Consequently, the surface of the cylindrical capacitor storage electrode 25 is bellow-shaped without high-temperature heat treatment so that the surface area is enlarged to increase capacitance

Semiconductor device and manufacture thereof

PURPOSE:To reduce the friction force acting on a bar body or the take-over tension by fixing an insulating soft elastic body to the end of a trough-shaped plating current shielding body enclosing a non-plated part on a bar body surface and bringing the end part into a sliding contact with the surface of the bar body. CONSTITUTION:The non-plated part on the surface of a long-sized metallic bar body 1 is enclosed with a current shielding body 6 comprised by a trough-shaped insulator. Plating solution 4 is penetrated from both ends into the shielding body 6 and the shielding body is filled with the solution. One end of the insulating soft elastic body 7 is fixed to the end of the shielding body 6 and the other end is brought into a sliding contact with the bar body 1. The bar body 1 is and a plating electrode 3 are dipped into the plating solution 4 in an electroplating tank 2, a DC voltage is impressed between the electrode 3 and the bar body 1 and the bar body 1 is traveled at a fixed speed in a length direction. At this time, the shielding body 6 and an elastic body 7 cooperate each other and shield non-plated part of the bar body 1 completely to provide a striped placed layer 5. In this case, the elastic body 7 only comes in a sliding contact with the surface of the bar body 1, the contact area is very small and the friction force acting on this contact area is low.

Apparatus for partial plating of long-sized metal bar body

PURPOSE:To enhance reliability by stabilizing plating work after the bonding of a tape by inclining the shaft of a roll with respect to the lateral direction of a strip like body to bond or peel a tapeiike material. CONSTITUTION:A roll 3 is opposed to the surface to which a tape 2 is bonded of a metal strip 1 moving at high speed and provided so that the shaft thereof is inclined with respect to the laterfal direction of the metal strip 1 and the angle of inclination of said shaft is set to 5-45 deg. with respect to the lateral direction of the metal strip 1. When the tape 2 is bonded to the metal strip 1, a pad 4 is provided to the rear of the metal strip 1 and the tape 2 is pressed to the surface of the metal strip 1 by the roll 3 and the pad 4. Whereupon, the tape 2 is bonded to the metal strip 1 at the lower position A of the axis of the roll 3 in preference to the end part of the tape 2. As a result, even when air enters the gap between the central part A in the lateral direction of the tape 2 and the metal strip 1, said air moves to the end parts of the tape 2 to be excluded and the remaining of air bubbles or a non-bonded part becomes hard to generate. By setting an angle of inclination to 5-45 deg., a peel boundary 5 becomes almost linear and the tape is peeled from the end part thereof.

Method for bonding and peeling tapelike material

PURPOSE:To align a thin long-sized body like a leak frame with high accuracy by hanging a positioning member with its pressing at near necessary position onto the positioning means for a long-sized body and after positioning the long- sized body to the necessary position with moving it by a trace amount transferring the long-sized body CONSTITUTION:A lead frame 4 is intermittently transferred until the distance B slightly shorter than the regulated transfer distance by a transfer means 9 The space from B up the regulated transfer distance point A is taken as the position where the tip of a pilot 1 is caught by the tip of a pilot hole 2 by descending the pilot pin 1 with a micro-aircylinder 5 and the lead frame 4 is transferred for trace distance with pressing the tip of the pilot pin 1 to the lead frame 4 When transferred up to the regulated transfer distance point A, the pilot pin 1 comes completely into the pilot hole 2 and further comes in the escape hole 3 of a load frame supporting base In this case the invagination of the pilot pin 1 is detected by a photoelectric switch 7 and the alignment is completed

Positioning method for long-sized body

PURPOSE:To improve dimensional accuracy of plating and sharpness of a boundary part with simple construction by providing gas sealing means for preventing leakage of a plating liquid from the neighborhood of opening corresponding to the plating parts of a band-shaped long-sized material while feeding the plating liquid to said opening. CONSTITUTION:A holder 1 for partial plating is pressed to the surface to be plated of the band-shaped long-sized material 10 which travels in an arrow direction. The rear face side of the long-sized material 10 is pressed to a guide plate 13. The holder 1 has >=1 plating liquid chambers 2 and has the opening 3 to limit the parts 11 to be plated of the long-sized material 10 at the top end thereof. The sealing members 6 are mounted along the circumference of the opening 3. The parts 11 contact the plating liquid in the opening 3 and are applied with striped plating 12 when electroplating is executed while the plating liquid is circulated through supply ports 4 and discharge ports 5 to the chambers 2. The parts near the contact parts between the members 6 and the material 10 are pressurized when a gas of a prescribed pressure is fed from supply ports 8 into gas chambers 7 in both side parts of the chambers 2. Leakage of the plating liquid from the boundary part 120 of the plating is thus prevented.

Hagitani Shigeo

Papers

Semiconductor device and manufacture thereof

Apparatus for partial plating of long-sized metal bar body

Method for bonding and peeling tapelike material

Positioning method for long-sized body

Holder for partial plating and partial plating method using said holder