A phase shift mask having a uniform thickness at a phase shift region. The phase shift mask includes a quartz substrate provided with a plurality of grooves, a chromium pattern coated over the grooves and every other portion of the quartz substrate disposed between the grooves, and a phase shift material pattern coated over the portion of the quart substrate not covered with the chromium pattern, the phase shift material pattern overlapping with the portions of the chromium pattern disposed at opposite sides of the portion of the quartz substrate not covered with the chromium pattern. This phase shift mask is fabricated by forming the chromium pattern such that it is flush with the quartz substrate at its edge. By this phase shift mask, it is possible to prevent the phase shift material pattern overlapping with the chromium pattern from having a non-uniform thickness due to the topology of the chromium pattern.

Phase shift mask and method for fabricating the same

An attenuated phase shift mask comprises a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift, formed on said first layer For a phase shift of 180° and i-line wavelength (365 nm) where chromium is used as the first layer, then a thickness within the range of about 25 to 75 nm is employed; where silicon dioxide is used as the second layer; then a thickness of about 400 to 450 nm is employed While the oxide may be dry-etched, an isotropic wet etch provides superior aerial images

Attenuated phase shift mask

Disclosed is an exposure method and apparatus for exposing a substrate by use of a pattern having a phase shift device, wherein the amount of phase shift with the phase shift device can be changed by changing the humidity of an ambient gas of the pattern.

Exposure method and apparatus

Methods of fabricating phase shift masks, which facilitate easy adjustment of the light transmissivity of a field region and the thickness of a phase shift mask, to thereby simplify the production process, and increase its reliability and performance. Embodiments may include the steps of providing a transparent substrate, forming a conductive light shielding layer on the transparent substrate, implanting oxygen ions into the conductive light shielding layer to form a semitransparent film, and selectively etching the semitransparent film to form a phase shift film.

Method for fabricating phase shift mask

An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.

EUVL mask structure and method of formation

A phase shift mask comprising a light-transmitting substrate, a plurality of uniformly spaced phase shift regions formed over the light-transmitting substrate, and a plurality of light shield regions formed over the light-transmitting substrate, each of the light shield regions being disposed at opposite sides of the phase shift regions. Each light shield region has substantially the same thickness as the phase shift regions. The phase shift regions are made of a conductive metal, thereby requiring no additional conductive film for avoiding charging phenomena. The light shield regions are made of an inexpensive metal such as zinc, which typically is less expensive than materials such as chromium. Any environmental contamination caused by waste disposal or the like also may be avoided in that heavy metals such as chromium need not be used.

Phase shift mask and method of making the same

The phase shift mask has a phase shifting Sn layer formed on a transparent glass substrate (20). The layer is formed by chemical vapour deposition to a thickness equal to a number (one less than the refractive index) of half-wavelengths. Patterned photoresists are applied before and after 02 ion implantation, leaving regularly spaced light-screening regions (21b) sepd. by ZnO (24) of the same thickness. No additional conductive layer is needed, so that charging under electron beam irradiation is prevented. ADVANTAGE - The mask has a smooth surface with light-screening and phase-shifting layers in the same plane. Mfr. is simplified and cost reduced with an inexpensive metal-oxide phase-shift layer.

Phase shift mask for submicron integrated circuit technology - has light-screening regions on opposite sides of each phase-shifting oxygen-ion implant region

Han O Seok

Papers

Phase shift mask and method of making the same

Phase shift mask for submicron integrated circuit technology - has light-screening regions on opposite sides of each phase-shifting oxygen-ion implant region