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Han-Ping D. Shieh
Researcher at AU Optronics
Publications - 12
Citations - 214
Han-Ping D. Shieh is an academic researcher from AU Optronics. The author has contributed to research in topics: Backlight & Liquid-crystal display. The author has an hindex of 7, co-authored 12 publications receiving 204 citations.
Papers
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Dynamic Backlight Gamma on High Dynamic Range LCD TVs
Fang-Cheng Lin,Yi-Pai Huang,Lin Yao Liao,Cheng-Yu Liao,Han-Ping D. Shieh,Te-Mei Wang,Szu-Che Yeh +6 more
TL;DR: In this article, the inverse of a mapping function (IMF) method proposed as a dynamic gamma mapping curve for the backlight module, has been demonstrated to further improve in HDR image quality.
Patent
Backlight module for 3D display device and method for displaying 3D images utilizing the same
Ko-Wei Chien,Yu-Mioun Chu,Han-Ping D. Shieh,Chih-Jen Hu,Ching-Sang Yang,Hsu Yi Cheng,Chieh Ting Chen,Chang Chih Ming,Yung Lun Lin,Meng Chang Tsai,Ching Huan Lin,Mu Jen Su,Hsiu Chi Tung +12 more
TL;DR: In this paper, a backlight module consisting of a first light guide plate, a second light source, and a second surface with a micro-groove structure is used for backlight control.
Patent
Thin film transistor, pixel structure and liquid crystal display panel
TL;DR: In this paper, a thin film transistor disposed on a substrate is provided, which includes a gate, a semi-conductive layer, a gate insulator, a source and a drain.
Patent
Backlight control method for high dynamic range LCD
TL;DR: In this article, a cumulative function of image is obtained according to its gray levels of pixels and then mapped to obtain a backlight modulation function according to a reference line to determine the backlight brightness provided for different regions of the liquid crystal display.
Patent
Semiconductor structure and fabricating method thereof
Po-Tsun Liu,Yi-Teh Chou,Li-Feng Teng,Fu-Hai Li,Han-Ping D. Shieh,Wei-Ting Lin,Ming-Chin Hung,Chun-Ching Hsiao,Jiun-Jye Chang,Po-Lun Chen +9 more
TL;DR: In this paper, a semiconductor structure and a fabricating method for semiconductor fabrication is described, which includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain.