PROBLEM TO BE SOLVED: To provide a composition for conductive film formation capable of forming a practical conductive film with conductivity and a conductive film forming method using the same, without using metal fine particles, in forming a conductive film with copper as a main component. SOLUTION: A conductive film forming composition containing noble metal compounds, copper salt, coordinating compounds, and a reductant is coated on a base material, and then is heated under a non-oxidizing atmosphere to form a conductive film on the base material. COPYRIGHT: (C)2011,JPO&INPIT

Composition for conductive film formation and conductive film formation method

PROBLEM TO BE SOLVED: To provide a thermoelectric material along with its manufacturing method comprising Mg 2 Si base thermoelectric semiconductor of excellent performance index, with improved safety in manufacturing process and reduced manufacturing cost when interested in a molten method and discharge plasma baking method under an atmospheric pressure SOLUTION: A lump of Mg and Si is housed in the dissolve chamber 7 of a graphite vessel 1 comprising a buffer cavity 6 on the atmosphere side with Al and Zn composite-added as dopant element With inert gas replaced in the buffer cavity 6, it is kept at a temperature range from the melting point of Mg 2 Si compound to the boiling point of Mg for a specified period, to generate a compound melt or alloy melt The melt is cooled to generate an ingot The Mg 2 Si material powder generated by crushing the ingot is baked by a discharge plasma baking method COPYRIGHT: (C)2006,JPO&NCIPI

Thermoelectric material and manufacturing method thereof

PROBLEM TO BE SOLVED: To provide a conductive ink composition which in the formation of a copper-based electrically conducting portion, enables the electrically conducting portion to be formed at a temperature at which a resin can be used as a substrate, and which enables a pattern to be formed by screen printing; and to provide a method for producing an electrically conducting portion using the conductive ink composition, and its applications.SOLUTION: The conductive ink composition including fine particles (A) of a copper salt composed of a carboxylic acid having reducing power and a copper ion and a coordinating compound (B) is applied onto or filled in a portion required to achieve electric conduction in a substrate, and the substrate is heat-treated to form the objective electrically conducting portion.

Conductive ink composition, method for producing electrically conducting portion, and its application

A thermoelectric material is disclosed. The thermoelectric material is represented by the following formula; (A1-aA′a)4-x(B1-bB′b)3-y. A is a Group XIII element and A′ may be a Group XIII element, a Group XIV element, a rare earth element, a transition metal, or combinations thereof. A and A′ are different from each other. B may be S, Se, Te and B′ may be a Groups XIV, XV, XVI or combinations thereof. B and B′ are different from each other. a is equal to or larger than 0 and less than 1. b is equal to or larger than 0 and less than 1. x is between −1 and 1 and wherein y is between −1 and 1.

Thermoelectric materials and Chalcogenide compounds

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application The compound semiconductor may be represented by a chemical formula: In x M y Co 4-m-a A m Sb 12-n-z-b X n Q z , where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0≦y<1, 0≦m≦1, 0≦a≦1, 0≦n<9, 0≦z≦4, 0≦b≦3 and 0<n+z+b

Compound semiconductors and their application

PROBLEM TO BE SOLVED: To provide a method for depositing copper layers on substrates without the aid of an electroless plating method and a dispersion liquid method including metallic particulates. SOLUTION: The copper layers are deposited on the substrates by bringing the substrate into contact with a product mixture composed of copper (II) formate and alkoxyalkylamines of formula I: R 1 -O-(CH 2 ) n -CHR 2 -NH 2 (R 1 is methyl or ethyl, R 2 is hydrogen or methyl and n is 1, 2, 3 or 4) at 80-200°C and under a pressure of 0.1-5 bar. COPYRIGHT: (C)2005,JPO&NCIPI

Deposition of copper on substrate

PROBLEM TO BE SOLVED: To provide a thermoelectric material having a high Z value as well as being excellent in temperature stability. SOLUTION: Related to a thermal converter comprising a p-doped or an n-doped semiconductor material, the semiconductor material is at least one kind of ternary material formed by combining at least two kinds of compounds among material substance classes, while selected among them; silicide, boride, germanide, telluride, sulfide, selenide, antimonide, lead compound, and semiconductor oxide.

Active material of thermoelectricity and thermal converter comprising it

PROBLEM TO BE SOLVED: To provide a heat transducer or a Peltier device equipped with a thermoelectric active semiconductor material comprising a plurality of metals or metal oxides. SOLUTION: A thermoelectric active material is selected from a p-doped or n-doped semiconductor comprising a ternary compound represented by a formula (1) [wherein, Me represents Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu, or Ag; S A and S B represent B, C, Si, Ge, Sb, Se or Te; S A and S B are metals of a group with a different periodic table; and x, y, and z denote the numerical values of 0.01 to 1], or a mixed oxide represented by a formula (2) [wherein, Me represents Fe, Cu, V, Mn, Sn, Ti, Mo, or W; n is an integer of 1 to 6; (a) represents 1 or 2; f is a number of 0.2 to 5; k is a number of 0.01 to 2; and u+v+w+x=1]. COPYRIGHT: (C)2004,JPO

Thermoelectric active material, heat transducer and peltier device comprising the same

PROBLEM TO BE SOLVED: To provide a method for producing an orthoester in a high yield, by reacting a trihaloalkane with an alkali metal alkoxide in the presence of a corresponding alcohol using a slurry of the alkali metal alkoxide. SOLUTION: This method for producing an orthoester comprises reacting (A) a 1,1,1-trihaloalkane (for example, 1,1,1-trihalomethane) with (B) an alkali metal alkoxide, for example, sodium methoxide, in the presence of a corresponding alcohol using a slurry (a suspension of the solid alkali metal alkoxide in the alcohol) by use of, for example, a blade drier, a kneader and a discotherm reactor. The slurry is preferably used in a state that a weight ratio of the solid component to the dissolved alkali metal alkoxide is at least 0.4. The reaction is preferably carried out using the component A in an amount of at most 1.1 mol per 3 mol of the component B.

Production of orthoester

PROBLEM TO BE SOLVED: To provide a photovoltaic cell made of a high-efficiency photovoltaic cell active material. SOLUTION: The photovoltaic cell active material of the photovoltaic cell is composed of a ternary component expressed by the general formula (I) Me x SA y SB z where Me is Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag, SA, SB are B, C, Si, Ge, Sb, Se or Te and belong to different groups in the periodic table, x, y, z mutually independently take values 0.01-1, and the total mass proportion of SA and SB is not less than 30% the total mass of the semiconductor material, or a mixed oxide expressed by the general formula (II) ((CaO) u (SrO) v (BaO) w (1/2Bi 2 O 3 )) f (2n+a)/2(k)Me n O a/n (2-k)Me n+a O (n+a)/2 where Me is Fe, Cu, V, Mn, Sn, Ti, Mo, W, and n is an integer of 1 to 6, a is 1 or 2, f is 0.2-5, k is 0.01-2, and u+v+w+x=1. COPYRIGHT: (C)2003,JPO

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Papers

Deposition of copper on substrate

Active material of thermoelectricity and thermal converter comprising it

Thermoelectric active material, heat transducer and peltier device comprising the same

Production of orthoester

Photovoltaic cell active material and cell containing the same