A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask

To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at% and less than 5 at%, the Si content is from 1 to 25 at%, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

Reflective mask blank for euv lithography

PROBLEM TO BE SOLVED: To provide a mask blank suitable to a photomask for FPD, and the photomask. SOLUTION: The mask blank 10 is for manufacturing an FPD device, and has a substrate 12, a light shield film 14 formed on the substrate 12 by using metal silicide as a material, and an upper-layer film 16 formed on the light shield film 14 by using oxidized or oxynitrided metal silicide as a material. The light shield film 14 and upper-layer film 16 are films to be wet-etched by using an etching mask obtained by patterning a resist film 18 formed on the upper-layer film 16, and the resist film 18 is formed by discharging resist liquid onto the upper-layer film 16 from a nozzle having a resist liquid supply hole extending in one direction and also simultaneously moving the nozzle in a direction crossing the one direction relatively to the upper-layer film surface, the upper-layer film 16 being 50 to 300Å thick. COPYRIGHT: (C)2008,JPO&INPIT

Mask blank and photomask

A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.

Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same

A reflective mask for an extreme ultra violet (EUV) lithography obtained by forming a mask pattern in an absorber layer of an reflective mask blank is useful in semiconductor production. The EUV reflective mask has two regions of a mask pattern region and a region outside the mask pattern region. The mask pattern region has the absorber layer and a non-absorber layer on the reflective layer of an substrate, wherein the region outside the mask pattern region has an EUV reflective layer, an EUV absorber layer, and a light shielding layer for suppressing reflection of EUV light and DUV-Vis light having a wavelength of from 190 to 500 nm. The EUV reflective mask reduces unnecessary exposure of resist formed on a substrate to reflected light from the region outside the mask pattern region and reduces a pattern size to produce an accurate transfer pattern.

Reflective mask blank for euv lithography and reflective mask for euv lithography

PROBLEM TO BE SOLVED: To provide a mask for EUV exposure improved in transfer resolution by EUV exposure, and to provide a mask blank for EUV exposure and an exposure method. SOLUTION: In the mask for extreme ultraviolet ray exposure having a high-reflection section comprising a multilayered film formed on a substrate and a single-layer film formed on one portion of the multilayer film, reflection light from the low-reflection section has a reflection factor of 5-15% to reflection light from the high-reflection factor, and has a phase difference of 175-185 degrees to reflection light from the high-reflection section. A reflection factor (1-δ) and an exhaustion coefficient β to the exposure wavelength of a single-layer film for composing the low-reflection section are within a region for connecting prescribed punctual coordinates (1-δ, β) on plane coordinates with the reflection factor (1-δ) and an exhaustion coefficient β as coordinate axes. COPYRIGHT: (C)2006,JPO&NCIPI

Mask for extreme ultraviolet ray exposure, mask blank, and exposure method

PROBLEM TO BE SOLVED: To provide an exposure mask for simplifying manufacturing processes and reducing the cost for the manufacture of a color filter for liquid crystal display device having a columnar spacer and projections having a function of aligning a liquid crystal. SOLUTION: The exposure mask blank 10b for the manufacture of a liquid crystal display device is produced by depositing a translucent film 21B containing a Ti and W film by reactive sputtering on a transparent substrate 11 and further depositing a light shielding film 31 consisting of a Cr and Cr oxide film. The exposure mask 100b for the manufacture of a liquid crystal display, the mask having a mask pattern P 1 and a mask pattern P 2 , is obtained by forming a resist pattern 41 having an opening 41a by an ordinary photolithographic process, etching the light shielding film 31 and the translucent film 21B, forming a resist pattern having an opening 41b', etching the light shielding film 31 and stripping the resist pattern 41. COPYRIGHT: (C)2005,JPO&NCIPI

Exposure mask blank for manufacture of liquid crystal display device, its manufacturing method and exposure mask

Absorption film defect inspection is possible without requiring a significant reduction in reflectivity of the absorption film and the complexity of the film formation process, and inspection of defects that occur when a buffer film is peeled off. To provide a mask for possible extreme ultraviolet exposure. A highly reflective portion of exposure light comprising a multilayer film formed on a substrate, a capping film for protecting the multilayer film, and an absorption film formed in a pattern on the capping film via a buffer film In a mask for extreme ultraviolet exposure comprising a low reflection portion consisting of, before peeling off the buffer film, the reflectance of the portion consisting of the multilayer film, the capping film and the buffer film with respect to ultraviolet light with a wavelength of 190 nm to 260 nm, The reflectance is lower than that of the portion including the absorption film. [Selection] Figure 1

Extreme ultraviolet light exposure mask and blank and pattern transfer method

PROBLEM TO BE SOLVED: To provide a reflective photo mask which has sufficiently low exposure reflectivity with respect not only to EUV light but also to DUV light during pattern inspection, and has a sufficient reflectivity contrast and therefore can perform extremely precise inspection and mask pattern transfer. SOLUTION: On a substrate, a multilayer reflection film and a light absorption layer are stacked including a light absorption film containing at least indium. COPYRIGHT: (C)2006,JPO&NCIPI

Reflective photo mask, blank thereof, and method of manufacturing semiconductor device using the same

PROBLEM TO BE SOLVED: To provide an EUV exposure mask capable of securing contrast of a laminate including a capping film laminated on a multilayer film and an absorption film defect to improve defect inspection ability by DUV light. SOLUTION: The EUV exposure mask includes the multilayer film, the capping film and the buffer film laminated on a substrate, and further includes the absorption film laminated thereon. Reflectivity of the laminate from the multilayer film to the absorption film is ≤26% in an ultraviolet region with a wavelength of 190-260 nm. The absorption film is formed so that its refractive index gradually increases toward the capping film. COPYRIGHT: (C)2008,JPO&INPIT

浩一郎金山

Papers

Mask for extreme ultraviolet ray exposure, mask blank, and exposure method

Exposure mask blank for manufacture of liquid crystal display device, its manufacturing method and exposure mask

Extreme ultraviolet light exposure mask and blank and pattern transfer method

Reflective photo mask, blank thereof, and method of manufacturing semiconductor device using the same

Mask blank for extreme ultraviolet ray exposure, mask for extreme ultraviolet ray exposure, and pattern transfer method

浩一郎 金山

Papers

Mask for extreme ultraviolet ray exposure, mask blank, and exposure method

Exposure mask blank for manufacture of liquid crystal display device, its manufacturing method and exposure mask

Extreme ultraviolet light exposure mask and blank and pattern transfer method

Reflective photo mask, blank thereof, and method of manufacturing semiconductor device using the same

Mask blank for extreme ultraviolet ray exposure, mask for extreme ultraviolet ray exposure, and pattern transfer method

浩一郎金山