Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of

Anisotropic etching of silicon

A method is described for the manufacture of a three-dimensional electrode array geometry for chronic intracortical stimulation. This silicon based array consists of a 4.2*4.2*0.12 mm thick monocrystalline substrate, from which project 100 conductive, silicon needles sharpened to facilitate cortical penetration. Each needle is electrically isolated from the other needles, and is about 0.09 mm thick at its base and 1.5 mm long. The sharpened end of each needle is coated with platinum to facilitate charge transfer into neural tissue. The following manufacturing processes were used to create this array: thermomigration of 100 aluminum pads through an n-type silicon block, creating trails of highly conductive p/sup +/ silicon isolated from each other by opposing pn junctions; a combination of mechanical and chemical micromachining which creates individual penetrating needles of the p/sup +/ silicon trails; metal deposition to create active electrode areas and electrical contact pads; and array encapsulation with polyimide. >

A silicon-based, three-dimensional neural interface: manufacturing processes for an intracortical electrode array

Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more recent emergence of higher resolution, surface-micromachining approaches, the majority of currently shipping silicon sensors are made using bulk etching. Particularly in light of newly introduced dry etching methods compatible with complementary metal-oxide-semiconductors, it is unlikely that bulk micromachining will decrease in popularity in the near future. The available etching methods fall into three categories in terms of the state of the etchant: wet, vapor, and plasma. For each category, the available processes are reviewed and compared in terms of etch results, cost, complexity, process compatibility, and a number of other factors. In addition, several example micromachined structures are presented.

/pdf/bulk-micromachining-of-silicon-57ln84jsy8.pdf

Bulk micromachining of silicon

Black silicon (BSi) represents a very active research area in renewable energy materials. The rise of BSi as a focus of study for its fundamental properties and potentially lucrative practical applications is shown by several recent results ranging from solar cells and light-emitting devices to antibacterial coatings and gas-sensors. In this paper, the common BSi fabrication techniques are first reviewed, including electrochemical HF etching, stain etching, metal-assisted chemical etching, reactive ion etching, laser irradiation and the molten salt Fray-Farthing-Chen-Cambridge (FFC-Cambridge) process. The utilization of BSi as an anti-reflection coating in solar cells is then critically examined and appraised, based upon strategies towards higher efficiency renewable solar energy modules. Methods of incorporating BSi in advanced solar cell architectures and the production of ultra-thin and flexible BSi wafers are also surveyed. Particular attention is given to routes leading to passivated BSi surfaces, which are essential for improving the electrical properties of any devices incorporating BSi, with a special focus on atomic layer deposition of Al2O3. Finally, three potential research directions worth exploring for practical solar cell applications are highlighted, namely, encapsulation effects, the development of micro-nano dual-scale BSi, and the incorporation of BSi into thin solar cells. It is intended that this paper will serve as a useful introduction to this novel material and its properties, and provide a general overview of recent progress in research currently being undertaken for renewable energy applications.

/pdf/black-silicon-fabrication-methods-properties-and-solar-1gjw6owq4d.pdf

Black silicon: fabrication methods, properties and solar energy applications

Microfabrication uses integrated-circuit manufacturing technology supplemented by its own processes to create objects with dimensions in the range of micrometers to millimeters. These objects can have miniature moving parts, stationary structures, or both. Microfabrication has been used for many applications in biology and medicine. These applications fall into four domains: tools for molecular biology and biochemistry, tools for cell biology, medical devices, and biosensors. Microfabricated device structures may provide significantly enhanced function with respect to a conventional device. Sometimes microfabrication can enable devices with novel capabilities. These enhancing and enabling qualities are conferred when microfabrication is used appropriately to address the right types of problems. Herein, we describe microfabrication technology and its application to biology and medicine. We detail several classes of advantages conferred by microfabrication and how these advantages have been used to date.

/pdf/microfabrication-in-biology-and-medicine-3cen2xbu90.pdf

Microfabrication in Biology and Medicine

The kinetics of the etching of silicon in the system , , and was studied as a function of the composition of the etchant at 25°C. A triaxial plot of the etch rate vs. composition of the etchant shows two extreme modes of behavior. In the region of high nitric acid compositions, etch rates are functions only of the hydrofluoric acid concentration. In the region of high hydrofluoric acid compositions, nitric acid concentration determines the etch rates. The kinetic behavior in the latter region is complicated by autocatalysis in which the reduction products of nitric acid are involved.The reaction proceeds by an oxidation step followed by the dissolution of the oxide. In the high hydrofluoric acid region the oxidation step is rate limiting. In the high nitric acid region the dissolution step is rate limiting. In both regions the flow of reagent to the surface by diffusion determines the etch rates. A plot of the etch rates as a function of the concentration of the rate‐limiting reagent indicates an exponential relationship between the etch rates and the concentration. This relationship has been explained qualitatively on the basis of a second, nonchemical autocatalytic factor, the heat of reaction.

https://iopscience.iop.org/article/10.1149/1.2427397/pdf

Harry Robbins

Papers

Chemical Etching of Silicon II . The System , , , and

Junction Delineation in Silicon