An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer (33) formed of a metal between a semiconductor layer (20) and a bonding substrate (31). When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

Light-emitting device and method of manufacturing the same

A light-emitting device package including: a package main body including a cavity and a lead frame including a mounting portion disposed in the cavity and a plurality of terminal portions; a light-emitting device chip mounted on the mounting portion; a plurality of bonding wires for electrically connecting the plurality of terminal portions and the light-emitting device chip; a light-transmitting encapsulation layer filled in the cavity; and a light-transmitting cap member disposed in the cavity and blocking the encapsulation layer to contact the plurality of bonding wires.

Light emitting device package

A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.

Semiconductor light-emitting device and method for manufacturing same

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

An object of the present invention is to provide a light-emitting device with a high output and a high efficiency by improving the efficiency for utilizing light emitted from a semiconductor light-emitting element. The inventive semiconductor light-emitting device comprises a package substrate, a sub-mount provided on the package substrate, a semiconductor light-emitting element provided on the sub-mount, and a reflector surrounding the sub-mount and the semiconductor light-emitting element, wherein the positions and sizes of the sub-mount, light-emitting element and reflector satisfy the following relationship (A) on a cross section perpendicular to the package substrate that passes through the center of the semiconductor light-emitting element, r - ls ≤ (hs - d) x (ls - lc) /hc --- (A) wherein r, ls and lc are distances from the drooping portion of the reflector, form the outer circumference of the sub-mount and from the outer circumference of the semiconductor light-emitting element to the center of the semiconductor light-emitting element, respectively, hs and d are heights of the sub-mount and of the drooping portion of the reflector, respectively, and hc is a height of the upper surface of the semiconductor light-emitting element from the upper surface of the sub-mount.

Hashimoto Takashi

Papers

Semiconductor light-emitting device