To provide a highly reliable semiconductor device which does not suffer from a crack in its package, a semiconductor chip 12 is mounted on a lead frame 11 with a bonding layer 13 between them, and they are sealed with a sealing resin 14. The lead frame 11 has a base member 11a essentially consisting of Cu and an oxide film 11b essentially consisting of an oxide of the base member 11a formed on the base member and having a thickness of about 50 nm or below. By controlling the oxide film 11b to a thickness of about 50 nm or below, an adhesion strength with the sealing resin 14 is improved greatly, so that a package crack does not occur even if a large thermal load is applied in a reflow process for mounting.

Semiconductor device, and manufacturing method of the same

PROBLEM TO BE SOLVED: To reduce parasitic capacitance and to stabilize the high-speed operation of a circuit. SOLUTION: In a semiconductor device, wirings 1 and 2 connecting elements are installed on a silicon substrate, where the elements are arranged so that at least two and above layers are vertically disposed. Supporters 3 and 4, which are connected to the lower faces 3d of the upper layer wirings 3 and support the upper layer wirings 2, are formed. A continuous space 5, extending from a gap (arrow 5a) between the lower wirings 2 to at least a part of the lower faces 2d of the upper layer wirings 2 (arrows 5b and 5c), is formed.

Semiconductor device and manufacturing method therefor

The present invention is a semiconductor device having a plurality of wiring on a semiconductor substrate It is provided with a first insulating film which covers the surface of all the aforesaid wiring, and a second insulating film containing air gaps which is formed between such of the aforesaid wiring as is mutually adjacent The method of manufacturing the semiconductor device to which the present invention pertains comprises a process whereby the first insulating film is formed in such a manner as to cover the surface of the plurality of wiring formed on the semiconductor substrate, and a process whereby the second insulating film containing air gaps is formed between such of the wiring on the aforesaid substrate as is mutually adjacent Here, the first insulating film is formed by means of the plasma CVD or spin coating methods, the second by means of the plasma CVD, spin coating, bias CVD, sputtering or similar methods

Semiconductor device, and method of manufacturing same

A gripper assembly for use with a media cartridge includes a gripper support and first and second gripper members supported by the gripper support. The gripper members are moveable asymmetrically with respect to the gripper support for gripping the media cartridge.

Gripper assembly for data storage system

In a method for forming an air gap in an insulating film between adjacent interconnection conductors in a semiconductor device, a substrate having a first insulator film and a plurality of lower level interconnection conductors formed separately from each other on the first insulator film is set in a chemical vapor process machine. A second insulator film is deposited to completely cover the plurality of lower level interconnection conductors and the first insulator film in a chemical vapor process under the condition that a growth speed in a vertical direction perpendicular to a principal surface of the substrate is lower than a growth speed in a horizontal direction in parallel to the principal surface of the substrate, until the second insulator film has such a thickness that an air gap is formed within the second insulator film between the adjacent interconnection conductors. The deposition of the second insulator film is further continued under the condition that the growth speed in the vertical direction perpendicular to the principal surface of the substrate is not lower than the growth speed in the horizontal direction in parallel to the principal surface of the substrate, until the second insulator film reaches a necessary thickness.

Method for forming an air gap in an insulating film between adjacent interconnection conductors in a semiconductor device

PROBLEM TO BE SOLVED: To eliminate insulator capacity formed at a portion exceeding upper and lower ends of each conductor between the conductors and hence reduce capacity between the conductors by providing a cavity exceeding the upper and lower ends of each conductor between the conductors. SOLUTION: A plurality of conductors 12, 13 becoming a second layer are formed on a first interlayer insulating film 11 becoming a first insulating film. A second interlayer insulating film 14 becoming a second insulating film is formed to cover the conductors 12, 13. A cavity 15 having its height exceeding the upper and lower ends of each conductor 12, 13 is provided between the conductors 12, 13. For this, the cavity 15 is formed also on an upper layer part of the first interlayer insulating film 11 and also on a lower layer part of the second interlayer insulating film 14 formed at a location higher than the upper surface of each conductor 12, 13. Thus, a specific inductive capacity between the conductors is reduced and hence capacity between the conductors is reduced.

Hayafuji Takanori

Papers

Semiconductor integrated circuit device