A high-speed process for coating substrates with thin organic coatings in a vacuum is disclosed and claimed. The process utilizes relatively low boiling, reactive monomers (e.g., polyacrylates) which are flash vaporized, condensed on the substrates and cured, in situ. The resultant cured films are pin-hole free and exhibit excellent adhesion. The process is capable of being run at very high coating and curing speeds, e.g., between 1 and 1000 cm/second.

High speed process for coating substrates

A high speed process for forming a multi layered thin film structure in a vacuum wherein each film is less than about four microns thick and the total layers can reach upwards to 4,000 or more. The polymeric layers are formed of a cross linked component selected from the group consisting of polyfunctional acrylates and mixtures of polyfunctional acrylates and monocrylates with the component having a preferable molecular weight of between 200 and 300 and a vapor pressure preferably in excess of 1×10-2 Torr. The polymeric layers may be interleaved with metal layers.

Method of making a multi-layered article

A monolithic multi-layer capacitor is disclosed having a central capacitively active area and two electrode joining sections separated from the active area by sloped sections. The dielectric layers are about 1 micron thick in the active area and taper gradually to zero thickness in the sloped sections. Electrode layers in the active area have a thickness in the range from 200 to 500 Angstroms and sufficient thickness throughout the sloped sections for adequate current carrying capacity. Various acrylates are used for the dielectric layers, the number of layers ranging from a few to many thousands. Apparatus and methods are disclosed for the fabrication of such capacitors on a high speed, production scale basis. Such employ techniques for the flash evaporation of highly reactive monomers of acrylate dielectric materials so as to form a gaseous stream of such materials. The gas stream is controllably directed to a deposition surface for condensation and subsequent curing by a field enhanced gas discharge electron beam source. The control of the dielectric gas stream is accomplished by means of adjacent gas streams of an inert gas directed to areas of the deposition surface where deposition of the electrode material is unwanted. Means are disclosed for the atomization of the monomers of the dielectric material in preparation for its flash evaporation.

Miniaturized monolithic multi-layer capacitor and apparatus and method for making

A high speed apparatus for forming capacitors includes a vacuum chamber in which is located a carrier defining a continuous surface configured to move at a rate of from about 150 feet per minute to about 600 feet per minute during the forming operation, a metal depositing device, a dielectric depositing device, and a radiation source. The metal depositing device is configured to deposit layers of metal onto the moving surface, and the dielectric depositing device includes (a) a device for atomizing a radiation-curable polyfunctional acrylic monomer to form liquid droplets of the monomer, (b) a heated surface on which the atomized monomer droplets impinge and are flash vaporized, and (c) device for thereafter condensing the flash-vaporized monomer on the metal layers to form a monomer coating on successive layers. The radiation source is positioned for curing successive monomer coatings after each such coating has been deposited, to thereby form a polymer dielectric layer. Apparatus are provided for controlling each of the devices so that metal is deposited, a monomer coating is deposited, and the monomer coating is cured to form the polymer dielectric layer before the continuous surface passes the devices again for successive metal layers, monomer coatings, and curings.

High speed apparatus for forming capacitors

A ferroelectric capacitor for a ferroelectric memory device includes a substrate (10), a silicon dioxide layer (20), a palladium adhesion layer (30), a bottom electrode (40) of platinum, a metal or an alloy, a ferroelectric material (50) and a top electrode (60) of platinum, a metal or an alloy.

Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices

A thin-film capacitor comprising a substrate plate, a dielectric layer, a first electrically conductive layer interposed between the substrate plate and one surface of the dielectric layer, and a second electrically conductive layer provided on the other surface of the dielectric layer. The dielectric layer is made of a mixture of a such as Al2O3, Y2O5, TiO2, SiO2, Ta2O5, BaTiO2, HfO or NbO and a divalent metal oxide such as an oxide of Be, Mg, Ca, Sr, Ba or Ra. The dielectric layer is formed by depositing the mixture on a first aluminum electrode by an electron beam deposition method. In order to further improve the properties of the thin-film capacitor, the surface of the aluminum electrode may be oxidized and the dielectric may be annealed in an atmosphere of nitrogen. Furthermore, a protective layer which has the same composition as the dielectric may be deposited on the second electrode.

Thin-film capacitor and method for the fabrication thereof

The condenser comprises a carrier plate, a dielectric film and 2 electrically conducting films (of Al), the first between the carrier plate and one side of the dielectric film and the second on the other side of the film. It consists of a mixt. of a dielectric material, i.e. one of Al2O3, Y2O5, TiO2, SiO2, Ta2O5, BaTiO2, HfO and NbO (Al2O3) and an oxide of a divalent metal, i.e. Be, Mg, Ca, Sr, Ba, and Ra (MgO). These materials have low dielectric loss and small active current. The condensers can be made small enough and with sufficient capacity for integrated microwave circuitry and are suitable for mass prodn. They have a small temp. coefft. of capacity and are stable mechanically, thermally and electrically.

Hayashi Takeshi

Papers

Thin-film capacitor and method for the fabrication thereof

Thin film capacitor - with divalent metal oxide in dielectric