A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate

To provide a method for selecting a silicon carbide semiconductor device capable of screening a silicon carbide semiconductor device whose reliability never decreases even when used in an inverter circuit connecting a diode in reverse parallel to the silicon carbide semiconductor device for a long time at a high temperature.SOLUTION: A method for selecting a silicon carbide semiconductor device used in an inverter circuit including a silicon carbide semiconductor device having an MOS gate structure and a diode connected in reverse parallel to the silicon carbide semiconductor device comprises the steps of: setting a temperature of the silicon carbide semiconductor device to a temperature of 235°C or higher and 300°C or lower; passing forward current whose frequency is 10 kHz or higher and 100 kHz or lower to the silicon carbide semiconductor device; measuring forward voltage of the silicon carbide semiconductor device; calculating a change rate of the forward voltage of the silicon carbide semiconductor device; and selecting a silicon carbide semiconductor device in which the calculated change rate is lower than 3%.SELECTED DRAWING: Figure 1

Method for selecting silicon carbide semiconductor device

To provide a silicon carbide epitaxial substrate in which a silicon carbide epitaxial layer having a low oxygen concentration is formed. A silicon carbide single crystal substrate 100 in which a diameter is 100 mm or larger, an oxygen concentration is 1*1017 cm-3 or lower, a dislocation density is 2*104 cm-2 or lower, and the area ratio of a lamination defect is 2.0% or lower is held by a substrate holder 160, and silicon carbide is epitaxially grown, while measuring and monitoring a dew point in a chamber 120, to thereby obtain a silicon carbide epitaxial substrate. A crystal growth apparatus(50) is provided with: a chamber (20) which comprises a gas feed port (21), a gas discharge port (22), a welded part and a water cooling unit that is configured so as to be capable of water cooling aportion that includes at least the welded part; an exhaust pump (30) which is connected to the gas discharge port (22); and a dew-point meter (40) which is arranged between the gas discharge port (22) and the exhaust pump (30), and which is configured so as to be capable of measuring the dew point of a gas that has passed through the gas discharge port (22).

Silicon carbide single crystal substrate and silicon carbide epitaxial substrate

The present invention provides a novel Fe-Mn-Si-based alloy casting material which is useful as a construction material and the like and has excellent low-cycle fatigue properties. According to one embodiment of the present invention, the Fe-Mn-Si-based alloy casting material is characterized by containing Mn and Si as essential component elements and containing at least one among Cr, Ni, Al, and C as optional component elements, the composition of the alloy casting material being 5 mass% ≤ Mn ≤ 35 mass%, 1.5 mass% ≤ Si ≤ 6.5 mass%, 0 mass% ≤ Cr ≤ 15 mass%, 0 mass% ≤ Ni≤ 15 mass%, 0 mass% ≤ Al ≤ 3 mass%, and 0 mass% ≤ C ≤ 0.4 mass%, with the remainder comprising Fe and unavoidable impurities, wherein the conditions of formula (A), 37 0.75[%Cr]+1.125[%Si]+2[%Al] are satisfied.

Fe-mn-si-based alloy casting material having excellent low-cycle fatigue properties

Zur Verfugung gestellt wird eine Halbleitervorrichtung, die einen aktiven Bereich, der in einer Halbleiterschicht einer ersten Leitfahigkeitsart vorgesehen ist, und einen Terminierungsbereich, der um den aktiven Bereich vorgesehen ist, aufweist. Ein MOS-Transistor, durch welchen ein Hauptstrom in einer Dickenrichtung der Halbleiterschicht fliest, ist in dem aktiven Bereich ausgebildet. Der Terminierungsbereich weist eine Defekterkennungsvorrichtung auf, die entlang des aktiven Bereichs vorgesehen ist. Die Defekterkennungsvorrichtung weist eine Diode auf, die eine erste Hauptelektrode, die entlang des aktiven Bereichs auf einer ersten Hauptoberflache der Halbleiterschicht vorgesehen ist, und eine zweite Hauptelektrode, die auf einer zweiten Hauptoberflachenseite der Halbleiterschicht vorgesehen ist, aufweist.

Halbleitervorrichtung und Verfahren zur Fertigung derselben

PROBLEM TO BE SOLVED: To provide a silicon carbide chip, a silicon carbide wafer, a test method for a silicon carbide chip, and a test method for a silicon carbide wafer, to which a current conduction test can be applied even when a chip has a large area.SOLUTION: A silicon carbide chip 4 includes a product chip region 1 in which a silicon carbide semiconductor element performing an actual action is crated, and a PN diode 3 which is disposed around the product chip region 1 and which is not involved in an actual action of a smaller area than the product chip region 1.

Silicon carbide chip, silicon carbide wafer, test method for silicon carbide chip, and test method for silicon carbide wafer

Provided are: a method for manufacturing silicon-carbide semiconductor devices, said method including a testing step in which the presence or absence of stacking faults in a PN diode is tested for in a comparatively short amount of time; and an energization-test device. In the present invention, the temperature of a bipolar semiconductor element is set to a temperature between 150°C and 230°C, inclusive; a forward current having a current density between 120 A/cm2 and 400 A/cm2, inclusive, is run through said bipolar semiconductor element continuously; the degree of change in the forward resistance of the bipolar semiconductor element with the forward current running therethrough is computed when said forward resistance has reached a saturated state; and it is determined whether or not the computed degree of change is less than a threshold.

和也小西

Papers

Silicon carbide chip, silicon carbide wafer, test method for silicon carbide chip, and test method for silicon carbide wafer

Method for manufacturing silicon-carbide semiconductor devices, and energization-test device

和也 小西

Papers

Silicon carbide chip, silicon carbide wafer, test method for silicon carbide chip, and test method for silicon carbide wafer

Method for manufacturing silicon-carbide semiconductor devices, and energization-test device

和也小西