An energy-efficient method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The waveform has a sub-nanosecond rise time. The system also includes a gain-switched, pulsed semiconductor seed laser for generating a laser pulse train at a repetition rate. The drive waveform pumps the laser so that each pulse of the pulse train has a predetermined shape. Further, the system includes a laser amplifier for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulses. The amplified pulses have little distortion and have substantially the same relative temporal power distribution as the original pulse train from the laser. Each of the amplified pulses has a substantially square temporal power density distribution, a sharp rise time, a pulse duration and a fall time. The system further includes a beam delivery and focusing subsystem for delivering and focusing at least a portion of the amplified pulse train onto the target material. The rise time (less than about 1 ns) is fast enough to efficiently couple laser energy to the target material, the pulse duration (typically 2-10 ns) is sufficient to process the target material, and the fall time (a few ns) is rapid enough to prevent the undesirable changes to the material surrounding the target material.

Energy efficient, laser-based method and system for processing target material

An EUV light source is disclosed that may include a laser source, eg CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, eg mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power

Laser produced plasma euv light source

A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Methods and systems for thermal-based laser processing a multi-material device

A method and apparatus for laser cutting a target material is disclosed The method includes the steps of generating laser pulses from a laser system and applying the laser pulses to the target material so that the laser pulses cut through the material The laser pulses have an approximately ellipse shaped spot, have a temporal pulse width shorter than about 100 nanoseconds, and have an energy density from about 2 to about 20 times the ablation threshold energy of the target material The laser pulses are applied to the material such that the major axis of the ellipse shaped spot moves parallel to the cutting direction The spot has a leading edge and a trailing edge on the major axis, and the energy density of each laser pulse increases from zero to a maximum along the leading edge and decreases back to zero along the trailing edge The apparatus is a laser system for cutting a target material that includes: a seed laser system for producing a first pulse laser beam; a laser amplifier for amplifying the first pulse laser beam to produce an amplified pulse laser beam; a harmonic generation system for converting the amplified pulse laser beam into a second pulse laser beam having a shorter wavelength; a focussing system for focussing the second pulse laser beam to an approximately ellipse shaped third pulse laser beam; and a motion control system for moving a target material contacted by the third pulse laser beam

Method and apparatus for laser ablation of a target material

A chirped pulse amplification system includes one or more polarization compensator configured to compensate for polarization altering elements with the chirped pulse amplification system. The polarization compensator is responsive to a sensor configured to provide feedback to the polarization compensator. In some embodiments, the chirped pulse amplification system further includes a controller configured to automatically adjust the polarization compensator responsive to the sensor. The sensor is optionally a power sensor.

Automated polarization correction

A high average power, high brightness solid state laser system. We first produce a seed laser beam with a short pulse duration. A laser amplifier (24) amplifies the seed beam to produce an amplified pulse laser beam which is tightly focused to produce pulses with brightness levels in excess of 1011 Watts/cm2. Preferred embodiments produce an amplified pulse laser beam having an average power in the range of 1 kW, an average pulse frequency of 12,000 pulses per second with pulses having brightness levels in excess of 1014 Watts/cm2 at a 20 micrometers diameter spot which may be steered rapidly to simulate a larger spot size. Alternately, a kHz system with several (for example, seven) beams (from amplifiers arranged in parallel) can each be focused to 20 micrometers and clustered to create effective spot sizes of 100 to 200 micrometers. These beams are useful in producing X-ray sources for lithography.

Low cost, high average power, high brightness solid state laser

A laser system which generates short duration pulses, such as under five nanoseconds at an energy level of up to a few milli-Joules per pulse (mJ/p) with near diffraction limited beam quality. A laser crystal is pumped (excited) by diode lasers. A resonator having at least two mirror surfaces defines a beam path passing through the laser crystal. The beam path in the resonator is periodically blocked by a first optical shutter permitting pump energy to build up in the laser crystal, except for a short period near the end of each pumping period. While the first optical shutter is open a second optical shutter blocks the light in the resonator except for periodic short intervals, the intervals being spaced such that at least one light pulse traveling at the speed of light in the resonator is able to make a plurality of transits through the resonator, increasing in intensity by extracting energy from the excited laser crystal on each transit. After the light pulse has built up in intensity, an optical release mechanism releases the pulse from resonator.

Henry Shields

Papers

Low cost, high average power, high brightness solid state laser

Short pulse laser system