The fairly recent availability of commercial focused ion beam (FIB) microscopes has led to rapid development of their applications for materials science. FIB instruments have both imaging and micromachining capabilities at the nanometer–micrometer scale; thus, a broad range of fundamental studies and technological applications have been enhanced or made possible with FIB technology. This introductory article covers the basic FIB instrument and the fundamentals of ion–solid interactions that lead to the many unique FIB capabilities as well as some of the unwanted artifacts associated with FIB instruments. The four topical articles following this introduction give overviews of specific applications of the FIB in materials science, focusing on its particular strengths as a tool for characterization and transmission electron microscopy sample preparation, as well as its potential for ion beam fabrication and prototyping.

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Focused Ion Beam Microscopy and Micromachining

The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

High density plasma deposition and etching apparatus

This study investigates uniaxial compression behavior of focused ion beam (FIB) manufactured [1 1 1] nickel (Ni) small-scale pillars, ranging in diameter from approximately 25 μm to below 200 nm, in order to examine the effect of crystallographic orientation on the mechanical properties. This study is unique from other micro-pillar studies in that the [1 1 1] orientation has a considerably lower Schmid factor, and has multiple slip systems available. The [1 1 1] Ni pillars show a strong increase in yield stress and work hardening with decreasing diameter. The relationship between yield stress and diameter (σy ∝ d−0.69) matches well with previous small-scale pillar studies. Strain hardening, which has been inconsistently observed in other micro-pillar studies, is found to be a function of both diameter and orientation. Although the precise mechanism for hardening is unknown, transmission electron microscopy reveals dislocations throughout the pillar and into the base material suggesting that dislocation interactions and deformation below the pillar play a role in the observed strain hardening. Furthermore, a slight crystallographic rotation of the pillar is observed likely contributing to the observed mechanical properties. By exploring the role of crystallography on the plastic deformation behavior, this study provides additional insight into the nature of the size effect.

Size effect on strength and strain hardening of small-scale [111] nickel compression pillars

Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like). In certain embodiments, the ion sources, systems and methods can enhance the ability to make tips having desired physical attributes (e.g., the number of atoms on the apex of the tip). This can enhance performance (e.g., increase reliability, stability and the like).

Ion sources, systems and methods

Applications of focused ion beam microscopy to materials science specimens

A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line. The end surface of the permanent magnet at the microwave lead-in side is coupled with the periphery of the high magnetic permeability material of the acceleration electrode through another high magnetic permeability material to form a magnetic path. The plasma chamber is formed of a dielectric insulator which transmits microwaves well. It is possible to realize an ion source in which ions can be extracted with a high electric field, and in which a high current ion beam can be extracted for a long time.

Microwave ion source

An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Method and apparatus for processing a micro sample

A probe driving method and a probe driving apparatus, which can bring a probe into safe and efficient contact with a sample surface by monitoring the probe height. The information of the height of the probe from the sample surface is obtained either by detecting a probe shadow (54) cast just before the contact with the sample, or from a change in the relative positions between the probe image and the sample image, as formed when obliquely irradiated with an ion beam.

Probe driving method, and probe apparatus

There are disclosed a method for fabricating (processing) a micro-sample used for the observation, analysis, and measurement by, for example, a transmission electron microscope (TEM), and an equipment for specimen fabrication (processing) used for carrying out the method. With the method for specimen fabrication (processing) of the present invention, a micro-sample to be separated and extracted from a specimen substrate is sandwiched and held between a plurality of branch beams formed at the tip of a beam. The beam holding the micro-sample is transferred onto a sample holder, and the micro-sample is mounted (firmly held) on the sample holder. After mounting the micro-sample on the sample holder, the beam is detached and separated from the mounted micro-sample. By adopting such a method, it is possible to fabricate a specimen for high reliability observation, analysis, and measurement entailing less contamination, in a shorter time and with efficiency.

Beam as well as method and equipment for specimen fabrication

Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

Hidemi Koike

Papers

Microwave ion source

Method and apparatus for processing a micro sample

Probe driving method, and probe apparatus

Beam as well as method and equipment for specimen fabrication

Apparatus for inspecting defects of devices and method of inspecting defects