H
Hideo Namita
Researcher at Mitsubishi
Publications - 4
Citations - 596
Hideo Namita is an academic researcher from Mitsubishi. The author has contributed to research in topics: Epitaxy & Gallium nitride. The author has an hindex of 4, co-authored 4 publications receiving 545 citations.
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Journal ArticleDOI
Bulk GaN crystals grown by HVPE
TL;DR: In this paper, a very thick c-plane bulk gallium nitride (GaN) was obtained by hydride vapor phase epitaxy (HVPE) on sapphire substrates.
Journal ArticleDOI
High-quality nonpolar m -plane GaN substrates grown by HVPE
Kenji Fujito,Kazumasa Kiyomi,Tae Mochizuki,Hirotaka Oota,Hideo Namita,Satoru Nagao,Isao Fujimura +6 more
TL;DR: In this paper, a large size m-plane GaN substrates are grown by hydride vapor phase epitaxy (HVPE) and the high crystalline quality of the substrates was observed by X-ray diffraction analysis.
Journal ArticleDOI
Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
Jun Suda,Kazuki Yamaji,Yuichirou Hayashi,Tsunenobu Kimoto,Kenji Shimoyama,Hideo Namita,Satoru Nagao +6 more
TL;DR: The currentvoltage characteristics of Schottky barrier diodes formed on GaN(0001) free-standing substrates with net donor concentrations of 7.6×1015-1.4×1017 cm-3 are discussed in this article.
Journal ArticleDOI
Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer
Hyo-Jong Lee,Jun-Seok Ha,Hyunjae Lee,Seog Woo Lee,Sang Hyun Lee,Hiroki Goto,Soon-Ku Hong,Meoung Whan Cho,Takafumi Yao,Kenji Fujito,Kenji Shimoyama,Hideo Namita,Satoru Nagao +12 more
TL;DR: In this paper, the influence of off-angles on the overgrown gallium nitride (GaN) films with respect to crystal quality and surface roughness was investigated by using off-cut sapphires.