A photolithography process facility comprising a substrate treating apparatus, the substrate treating apparatus includes a temperature control plate controlling a temperature a substrate, a central supporter having a pin shape vertically penetrating the temperature control plate and supporting a central region of substrate, and a collision preventer preventing a collision between the substrate and the temperature control plate.

Substrate treating apparatus

An etchant composition for nitride layers includes phosphoric acid in an amount ranging from about 80 weight percent to about 90 weight percent, a silicon-fluorine compound in an amount ranging from about 0.02 weight percent to about 0.1 weight percent, and a remainder of water, based on a total weight of the etchant composition. The silicon-fluorine compound includes a bond between a silicon atom and a fluorine atom (Si—F bonding).

Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same

A substrate treating apparatus includes a circulating line having a treating tank for storing a phosphoric acid aqueous solution, a circulating pump for feeding the phosphoric acid aqueous solution, a heater for circulation for heating the phosphoric acid aqueous solution, a filter for filtering the phosphoric acid aqueous solution, the circulating line causing the phosphoric acid aqueous solution discharged from the treating tank to flow in order of the circulating pump, the heater for circulation and the filter, and returning the phosphoric acid aqueous solution from the filter to the treating tank. The apparatus also includes a branch pipe branching from the circulating line between the heater for circulation and the filter for extracting the phosphoric acid aqueous solution from the circulating line, and a concentration measuring station connected to the branch pipe for measuring silicon concentration in the phosphoric acid aqueous solution by potentiometry.

A method and system for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs

Apparatus and method for controlling silicon nitride etching tank

The present disclosure provides one embodiment of an etch system. The etch system includes a tank designed to hold an etch solution for etching; a silicon monitor configured to measure silicon concentration of the etch solution; a drain module coupled to the tank and being operable to drain the etch solution; and a supply module being operable to fill in the tank with a fresh etch solution.

System and Method for an Etch Process with Silicon Concentration Control

Disclosed is equipment for measuring a silicon concentration in a phosphoric acid solution under use as an etching solution during operation of a semiconductor substrate processing system. The equipment is provided with at least a reaction tank and a concentration-measuring tank. The reaction tank includes a reaction unit for adding hydrofluoric acid to a predetermined constant amount of the phosphoric acid solution drawn out of the semiconductor substrate processing system to form a silicon fluoride compound and then causing the silicon fluoride compound to evaporate. The concentration-measuring tank comprises a hydrolysis unit for bubbling the silicon fluoride compound, which has evaporated from the reaction tank, through deionized water to hydrolyze the silicon fluoride compound and a measurement unit for determining a change rate of silicon concentration in the deionized water subsequent to the bubbling. Also disclosed is a method for measuring a silicon concentration in a phosphoric acid solution under recirculation and use as an etching solution in a semiconductor substrate processing system in operation.

Hideo Yata

Papers

Equipment and method for measuring silicon concentration in phosphoric acid solution