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Hidetoshi Nojiri

Researcher at Canon Inc.

Publications -  38
Citations -  531

Hidetoshi Nojiri is an academic researcher from Canon Inc.. The author has contributed to research in topics: Layer (electronics) & Laser. The author has an hindex of 14, co-authored 38 publications receiving 531 citations.

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Patent

Optical apparatus using wavelength selective photocoupler

TL;DR: In this paper, a diffraction grating is used to couple two waveguides through a diffusion grating, which couples light components of a specific wavelength range of light propagating through the first waveguide to the second waveguide layer, and an electrode for converting the light components absorbed by the light absorption layer into an electrical signal.
Patent

Film transfer method

TL;DR: In this article, a lift-off layer is formed on a first substrate having layers and then transferred onto a second substrate with layers, where the liftoff layer and the film are separated by etching the lift off layer and transferring it onto the second substrate.
Patent

Optical operation apparatus for effecting parallel signal processing by detecting light transmitted through a filter in the form of a matrix

TL;DR: In an optical operation apparatus, a light source emits a light intensity-modulated on the basis of a first electrical signal, and a photoelectric converting device converts the light modulated by the modulating device into a second electrical signal as mentioned in this paper.
Patent

Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the method

TL;DR: In this article, a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores, was presented, which consisted of a step of radiating a particle beam onto a workpiece, and another step of carrying out anodic oxidation of the workpiece having been irradiated with the particle beam.
Patent

Multibeam emitting device

TL;DR: In this article, a multibeam emitting device provided with a plurality of semiconductive light-emitting elements monolithically formed on a semiconductor substrate, the semiconductor light emitting elements are formed so that the directions of emission of the lights emitted from the elements differ from one another.