The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face.

Quantum cascade laser

Structure and method for fabricating semiconductor structures and devices for detecting an object

An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.

Enhancement mode metal-oxide-semiconductor field effect transistor

A semiconductor optical waveguide device comprises a stripe-shaped semiconductor optical waveguide, part of the semiconductor optical waveguide being an active layer producing gain by electric current injection, and part of the semiconductor optical waveguide being an intra-band resonant absorption layer in which an intra-band absorption resonant wavelength is arranged within the gain band of the active layer, and means for injecting electric current into the active layer.

Semiconductor optical waveguide device, optical control type optical switch, and wavelength conversion device

PROBLEM TO BE SOLVED: To reduce threshold level and to enhance reliability by employing a specified nitride based semiconductor material in a buried layer or an insulation layer thereby suppressing introduction of dislocation or strain to the side of other semiconductor for forming an active region. SOLUTION: An amorphous AlXGa1- XN (0<x<1) 110 is buried in the side face of an MQW active layer 103. An n side electrode 121 is formed on a contact layer 105 and a p side electrode 122 is formed on the rear side of a substrate 101. In the case of a semiconductor element having function for controlling a light having wavelength of 0.92-1.6 μm, refractive index of AlXGaYInZN (0<x<1, 0<y+z<1, x+y+z=1) and AlXGaYInZN added with H and O or C (0<=(x, y, z)<=1, x+y+z=1) is substantially invariant in that wavelength region. Since introduction of dislocation or strain to the side of other semiconductor for forming an active region is suppressed, a good quality active layer can be obtained.

Semiconductor element and fabrication thereof

PROBLEM TO BE SOLVED: To improve a grating-coupled surface light emitting device in coupling efficiency to an optical fiber or the like by a method wherein the emission pattern of a radiation mode light is made almost ideal. SOLUTION: A grating-coupled surface light emitting laser is equipped with a diffraction grating 115 of the second order or more provided to a part of a waveguide region for a guided light, and light is taken out in a direction vertical to the waveguide region. A stripe 120 in the waveguide region is constricted in the middle, and the diffraction grating 115 is shifted in phase, whereby a radiation mode light has such a profile that it is of a Gauss distribution in cross section in the direction in which light waves are guided.

Grating-coupled surface light emitting device

PURPOSE:To provide a semiconductor laser device having excellent high speed modulation characteristic which can reduce a capacitance resulting from pn junction and a contact resistance with a metal electrode without deterioration of mechanical strength of active region CONSTITUTION:A semiconductor laser device comprises a striped active region 15 formed on an n-type InP substrate 11, a p-type InP first clad layer 13a formed on this active region 15, a p-type InP second clad layer 13b formed on the upper surface and side surface of the first clad layer 13a and on the side surface of active region 15 and a p-type InGaAs contact layer 14 formed on the upper surface and side surface of the second clad layer 13b to ensure the contact with metal electrodes

Semiconductor laser device and manufacture thereof

The intra-band resonant absorption wavelength lies within the gain of the active layer (24). It can be the valence inter-band resonant absorption wavelength or the resonant absorption layer (24) can have a quantum well structure whose intra-band resonances are transitions between sub-bands within the well. Both layers can be identical. The intra-band resonant absorption layer and the active layer are stacked in intimate contact to make an integrated optical guide. The former is made of a material whose forbidden band is greater than double that of the active layer. Essentially layers of arsenic and/or phosphorus based III-V semiconductors comprise the active layer and multilayer nitrogen based III-V conductors comprise the absorption layer.

Hirayama Yuzo

Papers

Semiconductor optical waveguide device, optical control type optical switch, and wavelength conversion device

Semiconductor element and fabrication thereof

Grating-coupled surface light emitting device

Semiconductor laser device and manufacture thereof

Optical semiconductor waveguide, optically controlled switch and wavelength converter