A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix.

Solid state white light emitter and display using same

The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Light emitting device with blue light LED and phosphor components

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

Light emitting device and display

The present disclosure relates to a semiconductor light-emitting element, which comprises: a first light-emitting part, a second light-emitting part, and a third light-emitting part, wherein each of the light-emitting parts includes multiple semiconductor layers including a first semiconductor layer, an active layer, and a second semiconductor layer, laminated in sequence, the first semiconductor layer having a first conductivity, the active layer generating light through the recombination of an electron and a hole, and the second semiconductor layer having a second conductivity different from the first conductivity; a non-conductive reflecting film which is formed to cover the multiple semiconductor layers and reflects light generated from the active layer; a first electrode which is provided to electrically communicate with the first semiconductor layer of the first light-emitting part and which supplies one of an electron and a hole; a second electrode which is provided to electrically communicate with the second semiconductor layer of the second light-emitting part and which supplies the other of the electron and the hole; and an auxiliary pad formed on the non-conductive reflecting film which covers the third light-emitting part.

Semiconductor light emitting element

A semiconductor light emitting device, such as a light emitting diode or laser, includes a substrate which is provided with a hole and a pn junction extending adjacent to and in parallel with the side wall of the hole. Thus, the side wall of the hole extends in a direction perpendicular to a main surface of the substrate. A pair of electrodes is provided such that current flows across the pn junction so that light emitted in a vertical direction which is perpendicular to the main surface of the substrate. The hole may be either a through hole or a bore hole. With the additional provision of a pair of resonators, there is provided a semiconductor laser.

Semiconductor light emitting device with vertical light emission

A surface emission type semiconductor light-emitting device includes a base having a main surface, a current blocking layer formed on the base, and a semiconductor layer formed on the current blocking layer. A circular recess or hole having a side wall which is substantially perpendicular to the main surface is formed in the semiconductor layer as extending therethrough and partly into the base. An impurity is introduced into the semiconductor layer through the side wall and thus there is defined a cylindrical diffusion region around the recess. A p-n junction is defined at an outer boundary of the diffusion region and the p-n junction effectively defines a light-emitting activation region. An additional diffusion region may be formed in the semiconductor layer for narrowing a current path in the semiconductor layer. A second current blocking layer may be formed on top of the semiconductor layer. The semiconductor layer may have a multi-layer structure which may be constructed to provide a current confinement effect.

Surface emission type semiconductor light-emitting device

PURPOSE:To convert the wavelength of emitted light into the other wavelength and visualize the invisible light and employ an array structure to provide a precision display device and so forth by a method wherein a P-N junction which is extended along the direction perpendicular to a flat plate part is incorporated in a column-shape protrusion and exposed on its top surface and a fluorescent layer covering a part of the exposed junction is provided on the top surface. CONSTITUTION:A light emitting device is constituted by a flat plate part B composed of a substrate B1 and an upper layer B2, a column-shape protrusion P provided on the one side surface of the flat plate part B, a P-type side electrode E1 provided on the side circumferential surface of the column-shape protrusion P and on the top surface of the flat plate part B, an N-type side electrode E2 provided on the bottom surface of the flat plate part B, an SiO2 layer 5 formed over the whole top surface of the column-shape protrusion P, a fluorescent layer 7 provided on the SiO2 layer 5 and an insulating layer 10 provided between the top surface of the flat plate part B and the electrode E1. As the fluorescent layer 7 is provided on the top surface of the column-shape protrusion P with the SiO2 layer 5 between for the purpose of converting the wavelength of an emitted light from the light emitting part into the other wavelength, an infrared ray can be converted into a visible light. With this constitution, a display device can be provided by arranging the light emitting devices into single- or two-dimensional array structure.

Junction-type semiconductor light emitting device

L'invention concerne les dispositifs photoemissifs a semi-conducteur. Elle se rapporte a un dispositif photoemissif dans lequel un trou debouchant 4 est forme dans un substrat semi-conducteur 2. Une jonction pn est formee par diffusion d'impurete qui forme une region active 31. Une electrode 1 est disposee sur la region active et eventuellement sur une face du substrat 2, et une autre electrode est formee sur l'autre face. La lumiere creee par la region active 31 est dirigee preferentiellement en direction perpendiculaire a la grande face du substrat 2. Application aux dispositifs d'affichage. (CF DESSIN DANS BOPI)

Dispositif photoemissif a semi-conducteur de type directionnel

PURPOSE:To emit light beams from a plurality of positions on the surface of a substrate selectively to the direction vertical to the surface by a method wherein a plurality of protrusions which are protruded approximately vertically to the substrate surface are arranged in an array and light emitting regions which emit light beams to the longitudinal axial directions of the protrusions by the recombinations of electrons and positive holes are provided in the respective protrusions. CONSTITUTION:On the top surface of a semiconductor substrate 3, a plurality of column-shape protrusions 5 are arranged in a single row array with intervals between each other. A light emitting region which can emit a light beam to the longitudinal axial direction of each protrusion 5 or the direction vertical to the top surface of the substrate 3 is formed in each protrusion 5 and the light is emitted by the recombinations of electrons and positive holes which are induced when a current is applied to it. An insulating layer 2 is formed over the whole top surface of the substrate 3 except the protrusions 5 and individual wirings 1a which extend toward the corresponding protrusions 5 are formed on the insulating layer 2. On the bottom surface of the substrate 3, a common electrode 4 is formed and faces respective individual electrodes 1b on the top surface in common. With this constitution, if one or more protrusions are selected among a plurality of the protrusions 5 and currents are applied between the selected protrusions 5 and the common electrode 4, light beams can be emitted vertically to the substrate surface from the protrusions 5.

Hiromasa Ito

Papers

Semiconductor light emitting device with vertical light emission

Surface emission type semiconductor light-emitting device

Junction-type semiconductor light emitting device

Dispositif photoemissif a semi-conducteur de type directionnel

Array type semiconductor light emitting device