An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes.

Semiconductor display device

In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

Active matrix display device

A semiconductor device formed on an insulating substrate of the present invention includes: a gate wiring provided on the insulating substrate; a first insulating film provided so as to cover the gate wiring; an upper electrode formed so as to face the gate wiring in such a manner that the first insulating film is interposed therebetween; a second insulating film provided so as to cover the upper electrode; and another electrode formed on the second insulating film, wherein the upper electrode is electrically connected to the another electrode via a contact hole formed through the second insulating film, a storage capacitor is formed of a structure including the upper electrode, the first insulating film, and the gate wiring opposing the upper electrode through the first insulating film, the upper electrode and the gate wiring have substantially the same width.

Semiconductor device, active-matrix substrate and method for fabricating the same

A thin-film transistor circuit, which is used as a driving circuit for driving pixels in an image display, is constituted of a plurality of thin-film transistors that are formed on an insulating substrate. In each thin-film transistor, a conductive electrode is placed so as to face a gate electrode with a channel region of a polycrystal silicon thin-film that forms an active layer located in between. Here, a constant voltage is applied to the conductive electrode. When threshold voltage is shifted by applying a voltage to the conductive electrode, it is possible to allow the absolute value of the threshold voltage of n-channel-type transistors and the absolute value of the threshold voltage of p-channel-type transistors to become virtually equal to each other. Moreover, it is possible to properly set the threshold voltage in accordance with factors such as the channel length of the thin-film transistors, the types of circuits that are constituted of the thin-film transistors and voltages to be applied to the thin-film transistors. Thus, it becomes possible to remarkably improve the characteristics of thin-film transistor circuits, such as operation speeds and holding characteristics.

Thin-film transistor circuit and image display

PROBLEM TO BE SOLVED: To suppress the etching shift quantity of an Mo film to an Al film in a TFT, by forming each of conductor layers connected respectively with its drain and source which are formed on an insulation substrate region out of a laminated structure comprising an Al based metal film and an Mo film containing nitrogen. SOLUTION: As a wiring 10 for the source or drain of a TFT, an Al alloy film 8 of 500nm in film thickness is formed in the atmosphere comprising an Ar gas of 10sccm and a gas pressure of 3.0×10 Torr. Thereon, an Mo film 9 of 150nm in film thickness is formed in the atmosphere comprising an Ar gas of 20sccm, an N2 gas of 10sccm and a gas pressure of 3.0×10 Torr. The Al and Mo thin films 8, 9 are patterned by wet etching which is performed dipping them into the mixture of phospheric, nitric and acetic acids and water, making the simultaneous etchings of these two film layers 8, 9 possible. Since the Mo film 9 constituting the two-layer structure together with the Al film 8 is formed in the atmosphere containing nitrogen, the etching shift quantity of the Mo film 9 to the Al film 8 can be suppressed to be small.

Thin-film transistor and its manufacture

PROBLEM TO BE SOLVED: To greatly improve the characteristics of a thin-film transistor circuit in terms of operation speed, holding characteristics, etc. SOLUTION: The thin-film transistor(TFT) circuit is constituted by forming plural TFTs on an insulating substrate 11. Conductive electrodes 14 are so arranged as to face gate electrodes 16 across the channel regions 12a of polycrystalline silicon thin films 12 constituting active layers of these TFTs. The same specified voltage is impressed on the conductive electrodes 14. The absolute value of the threshold voltage of n channel type transistors(TRs) and the absolute value of the threshold voltage of p channel type TRs are nearly equaled to each other if the threshold voltage is shifted by impressing the voltage on the conductive electrodes 14. The adequate setting of the threshold voltage according to the channel lengths of the TFTs, the kinds of the circuits constituted by the TFTs, the voltage impressed on the TFTs, etc., is made possible as well.

Thin-film transistor circuit and image display device

PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a polycrystalline silicon film excellent in surface flatness without the addition of a separate and independent step SOLUTION: The polycrystalline silicon film manufacturing apparatus (pulse laser irradiation apparatus) 100 is used for converting an amorphous silicon film 210 into a polycrystalline silicon film 210' The polycrystalline silicon film manufacturing device 100 has a first laser source 120 that emits a laser beam L1 for heating the amorphous silicon film 210 beyond its melting point for melting the same It also has a second laser source 130 that emits a laser beam L2 for partly melting the surface of the polycrystalline silicon film 210' before it is completely solidified in the process wherein the silicon melt produced by the heating of the amorphous silicon film 210 by the laser beam L1 from the first laser source 120 is let to solidify for the formation of the polycrystalline silicon film 210' COPYRIGHT: (C)2004,JPO

Hiromi Sakamoto

Papers

Semiconductor device, active-matrix substrate and method for fabricating the same

Thin-film transistor circuit and image display

Thin-film transistor and its manufacture

Thin-film transistor circuit and image display device

Apparatus for manufacturing polycrystalline silicon film, manufacturing method by using the same, and semiconductor device