A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.

Programmable microelectronic devices and methods of forming and programming same

The present paper reviews the results of experimental investigations of the photodoping of amorphous chalcogenides by metals, and in particular by silver. The kinetics of the photodissolution of the metal are described as also is the influence on the photodissolution rate of such factors as the wavelength and intensity of light, the composition and temperature of the semiconductor, and an external electric field. A separate section describes lateral diffusion. The properties of photodoped semiconductors (electrical, optical, photoelectric, etc.) are presented. The results in the literature are analysed, giving answers to such fundamental questions as the following. Where is the actinic light which is efficient for the photodissolution absorbed? Which is the diffusion-limiting step? What is the state of the diffusing species (neutral atoms or ions)? The dissolution of silver induced by electron or ion beams and the photodissolution of group II metals are mentioned. The experimental results are fol...

Photodoping of amorphous chalcogenides by metals

Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of low atomic weight, such as neon or helium. The plasma has a sputter yield sufficient to sputter a metal target and a UV component of its emitted spectrum sufficient to induce diffusion of the sputtered metal into the chalcogenide layer. Using such methods, a conductive layer can be formed on the doped chalcogenide layer in situ. In integrated circuit devices, such as non-volatile chalcogenide memory devices, doping of the chalcogenide layer concurrently with metal deposition and formation of a conductive layer in situ with the doping of the chalcogenide layer reduces contamination concerns and physical damage resulting from moving the device substrate from tool to tool, thus facilitating improved device reliability.

Integrated circuit device and fabrication using metal-doped chalcogenide materials

A programmable sub-surface aggregating metallization structure (100) includes an ion conductor (110) such as a chalcogenide glass which includes metal ions and at least two electrodes (120, 130) disposed at opposing surfaces of the ion conductor (110). Preferably, the ion conductor (110) includes a chalcogenide material with Group IB or Group IIB metals. One of the two electrodes (120, 130) is preferably configured as a cathode and the other as an anode. When a voltage is applied to between the anode and cathode, a metal dendrite (140) grows from the cathode through the ion conductor (11) toward the anode. The grow rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back toward the cathode by reversing the voltage polarity at the anode and the cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor (110) and connects the electrodes (120, 130), thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.

Programmable sub-surface aggregating metallization structure and method of making same

CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells

The electric conductivity of the chalcogenide glass increased with an increase in the amount of Ag which had been photo-doped. By applying the electric field to the electrodes which were set on the surface of the Ag photo-doped chalcogenide glass film, a conductive path was grown from the cathode to the anode. As a result of the connection of the electrodes with the path, the electric resistance of the cell abruptly decreased (ON state). The path was made of the metal silver reduced by electrolysis and was diminished by irradiation with light. As the path was erased, the cell was turned into the resistant state (OFF state). The cycles were repeatable many times. There was a delay time (td) in turning the cell from the OFF to the ON state by applying the electric field (E). It was empirically described by the following equation for the Ag photo-doped chalcogenide glasses:t_d=aexp(-b·E)

The Photo-Erasable Memory Switching Effect of Ag Photo-Doped Chalcogenide Glasses

The unstable colorless form (A′) of the reverse photochromic spiran (SP-3) (1,3,3-trimethyl-5-methoxyspiro[indoline-2,2′-benzopyran]-8′-carboxylic acid) was obtained in a stable state by vacuum evaporation (10−5 Torr) on a KBr substrate. It was confirmed by IR spectral analysis that reverse photochromism occurred between the colored (B′; merocyanine-like structure) and the colorless forms (A′; spiropyran). A colorless transient intermediate (X) was observed in the photo-decoloration process of the (SP-3). X was transformed into both A′ and B′. Thus the photo-decoloration efficiency (φB′→A′) depends on the ratio of the conversion from X to A′. State (B′) is stabilized in a polar or proton donative solvent. The life time of X is greatly influenced by the solvent as well as the stability of B′. The photo-decoloration efficiency (φB′→A′) of the spirans is effectively improved by substituting SP-2 with (methoxyl group) at 5-position. Whether X is observable or not depends on the substituent and its position. T...

Photo-decoloration Process of the Reverse Photochromic Spirans

The Photo-doping of Metals into Solids for New-type Imaging Systems

Photosensitive member employing an inorganic compound capable of photooxidizing a metal and a metal capable of diffusing into the inorganic compound by photooxidation, comprises a photosensitive layer containing uniformly a photosensitive particles composed of particle of the inorganic compound and a metal selected from the group consisting of Ag, Cu, and alloy containing Ag, Cu or both of Ag and Cu, attached to the surface of the inorganic compound particle.

Photosensitive material containing inorganic compound coated metal particles and the use thereof in photographic development processes

A thermal recording is effected by applying a thermal pattern to a recording member having a recording layer composed of at least a polymer complex to produce a reversible latent image capable of being visualized.

Hiroshi Kokado

Papers

The Photo-Erasable Memory Switching Effect of Ag Photo-Doped Chalcogenide Glasses

Photo-decoloration Process of the Reverse Photochromic Spirans

The Photo-doping of Metals into Solids for New-type Imaging Systems

Photosensitive material containing inorganic compound coated metal particles and the use thereof in photographic development processes

Thermal recording method