Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations Methods of depositing copper layers using such copper plating baths are also disclosed

Plating bath and method

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a plurality of Au bumps having a uniform heightSOLUTION: The method of manufacturing the semiconductor device includes the processes of: forming a seed film 3 on a semiconductor chip 1; forming photoresist 4 having an opening part 41 above the electrode 13 of the semiconductor chip, on the seed film 3; forming a first Au bump 5 on the seed film 3 included in the opening part 41 through electrolytic plating of ≥15 A/dmin current density; grinding the surface of the first Au bump 5; peeling the photoresist 4; and removing the seed film 3 through dry etching

Method of manufacturing semiconductor device

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device having high reliability, by which occurrence of the defect of gold plating due to lowering of thallium concentration is restrained. SOLUTION: In the method of manufacturing the semiconductor integrated circuit device, the quantity of thallium to be added to a plating solution 21 is detected by monitoring the applied voltage to the plating solution 21 during the process of forming gold bump electrode by a gold electroplating technology using a non-cyanide based plating solution to restrain the plating defect such as abnormal deposition of gold due to the decrease of the concentration of thallium to be added. COPYRIGHT: (C)2011,JPO&INPIT

Method of manufacturing semiconductor integrated circuit device

Provided is a connector of which the quality of conduction can be determined by means of an impression test, and with which conduction reliability can be ensured. The connector is provided with: a transparent substrate (12) on which a plurality of terminals (19) is formed; and an electronic component (18) connected to the transparent substrate (12) via an anisotropic conductive adhesive (1) in which electrically conductive particles (4) are disposed, the electronic component (18) having a plurality of bumps (21) formed thereon which are electrically connected to the plurality of terminals (19)via the electrically conductive particles (4), wherein the electrically conductive particles (4) are independent from and not in contact with one another, and the bumps (21) have a concave-convex portion (28) formed on a surface thereof, the concave-convex portion (28) having a height difference of not less than 10% of the particle diameter of the electrically conductive particles (4). On the surface of one bump (21), a region in which the height difference from a most protruding convex portion (28a) is not less than 20% of the particle diameter of the electrically conductive particles (4) occupies not more than 70% of the surface area of the bump (21).

Connector, method for manufacturing connector, and testing method

PROBLEM TO BE SOLVED: To provide a non-cyanogen gold electroplating bath for the formation of a bump and a bump forming method capable of obtaining gold bumps having hardness and shape suitable for thermal pressure connection through the use of anisotropic conductive adhesive. SOLUTION: The non-cyanogen gold electroplating bath for the bump formation contains the alkali salt of gold sulfite or ammonium gold salfite as a gold source, crystallization adjusting agent, 5-150 g/L of a conductive salt consisting of potassium sulfite, 1 mg/L-6 g/L of plyalkylene glycol having a molecular weight of 200-6,000 and/or 0.1 mg-1 g/L of an amphoteric surfactant, a water-soluble amine, and/or a buffer. A bump having a film hardness of 50-90 Hv, and a surface height difference of ≤1.8 μm is formed by performing gold electroplating on the patterned wafer by the use of the gold electroplating bath and then by heat-treating it at 200-400°C for ≥5 minutes. COPYRIGHT: (C)2009,JPO&INPIT

Non-cyanogen gold electroplating bath for bump formation and bump forming method

PROBLEM TO BE SOLVED: To provide a cyanide-free electrolytic gold plating bath for bump formation which can obtain a gold bump with bump hardness and shape suitable for joining with a substrate electrode subjected to tinning or gold plating. SOLUTION: The cyanide-free electrolytic gold plating bath for bump formation comprises: the alkaline salt of gold sulfite or ammonium gold sulfite as a gold source; water soluble amine as a stabilizer for a plating bath; a crystal regulator; a conductive salt composed of sodium sulfite by 5 to 150 g/L; a buffer; and polyalkylene glycol with a molecular weight of 2,000 to 6,000 by 0.01 to 10 mg/L. As the crystal regulator, a Tl compound, a Pb compound or an As compound is preferable, and, as the water soluble amine, a 2 to 6C diamine compound is preferable. COPYRIGHT: (C)2009,JPO&INPIT

Cyanide-free electrolytic gold plating bath for bump formation, and method for forming bump

PROBLEM TO BE SOLVED: To provide a plating bath for forming an electrode, which is used for forming the electrode having a hardness and a shape suitable for electrode bonding with the use of an anisotropic electroconductive adhesive and electrode bonding by forming a eutectic with the other metal, and to provide a method for forming the electrode by using the plating bath.SOLUTION: The gold plating bath for forming the electrode includes: (a) 1-20 g/L of an alkaline salt of gold sulfite or ammonium salt of gold sulfite, by a gold concentration, (b) 0.1-100 mg/L of a crystal moderator formed from a Tl compound, a Pb compound or an As compound, by a metal concentration, (c) 5-150 g/L of sodium sulfite, (d) 1-60 g/L of a salt of an inorganic acid, a carboxylate or a hydroxycarboxylate, by a salt concentration, and (e) 0.1-200 mmol/L of a predetermined substituted aromatic compound. The electrode is formed with a plating method with the use of the plating bath.

晃一郎井上

Papers

Cyanide-free electrolytic gold plating bath for bump formation, and method for forming bump

Non-cyanogen gold electroplating bath for bump formation and bump forming method

Gold plating bath for forming electrode and method for forming electrode by using the same

晃一郎 井上

Papers

Cyanide-free electrolytic gold plating bath for bump formation, and method for forming bump

Non-cyanogen gold electroplating bath for bump formation and bump forming method

Gold plating bath for forming electrode and method for forming electrode by using the same

晃一郎井上