A pole layer has a track width defining portion and a wide portion. The pole layer has: first and second side surfaces located opposite to each other in a first region extending from a medium facing surface to a position at a distance of 10 to 300 nm from the medium facing surface; third and fourth side surfaces located in a second region other than the first region; a fifth side surface located at the boundary between the first and second regions and connecting the first and third side surfaces to each other; and a sixth side surface located at the boundary between the first and second regions and connecting the second and fourth side surfaces to each other. The distance between the first and second side surfaces taken in the track width direction decreases with decreasing distance from the top surface of the substrate. The angle formed by the third and fourth side surfaces with respect to the direction orthogonal to the top surface of the substrate is smaller than that formed by the first and second side surfaces with respect to the direction orthogonal to the top surface of the substrate.

Magnetic head for perpendicular magnetic recording and method of manufacturing same

A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

Magnetic element utilizing spin transfer and an mram device using the magnetic element

A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed The magnetic element includes a spin tunneling junction, a separation layer and a spin valve In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction

Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

A thin-film magnetic head comprises a reproducing head and a recording head. The reproducing head comprises: a GMR element; a bottom shield layer and a top shield layer for shielding the GMR element; conductive layers connected to the GMR element; and shield gap films formed between the shield layers. Each of the shield gap films is made up of a plurality of thin alumina films stacked that are formed by performing the step of forming a thin alumina film by low pressure CVD, for example, a plurality of times.

Thin-film magnetic head and method of manufacturing same

A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

Magnetic memory element utilizing spin transfer switching and storing multiple bits

Electromagnetic transducers are disclosed having write poles with a leading edge that is smaller than a trailing edge, which can reduce erroneous writing for perpendicular recording systems. The write poles may have a trapezoidal shape when viewed from a direction of an associated medium. The write poles may be incorporated in heads or sliders that also contain read elements such as magnetoresistive sensors, and may be employed with information storage systems such as disk drives.

Magnetic heads for perpendicular recording with trapezoidal pole tips

A magnetic head includes pole tips with aligned sidewalls and a low head profile. The aligned sidewalls are formed by depositing a stack of pole tip layers on a substrate. The stack of layers are etched through a common overlying mask. The stack of layers is covered over and around with a protective layer which is then planarized such that the stack of layers is exposed. The protective layer is etched to a predetermined thickness above the substrate, which is thinner than the thickness of the stack of layers. An inductive coil layer is deposited on the etched protective layer and covered with an overlying magnetic yoke layer which is dielectrically separated from the coil layer. The yoke layer thus formed assumes a low profile curvature due to the thin structure of the protective layer on the substrate. As a consequence, the overall stack height of the magnetic head is reduced, thereby reducing the inductance of the overlying yoke layer and further alleviating the step coverage problem of the magnetic head during fabrication.

Magnetic head with low stack height and self-aligned pole tips

A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.

Spin-dependent tunneling sensor suitable for a magnetic memory

An inductive transducer having first and second magnetic pedestals disposed between first and second magnetic pole layers and adjacent to a media-facing surface, the pedestals separated by a submicron, nonmagnetic gap. The first pedestal extends less than the second pedestal from the media-facing surface, defining a short throat height. The second pedestal extends further to provide sufficient area for stitching to the second pole layer. The stitching and the thickness provided by the pedestals allow plural coil layers to be disposed between the pole layers, and the second pedestal, as well as other features, can be defined by high-resolution photolithography. The two coil layers have lower resistance, lower inductance and allow the pole layers to be shorter, improving performance. All or part of either or both of the pedestals may be formed of high magnetic saturation material, further enhancing performance.

Inductive transducer with stitched pole tip and pedestal defining zero throat height

An MRAM cell includes a pinned layer, a free layer, and a bit line with a magnetic sheath. The magnetic sheath allows a magnetic field to circulate in a loop around the bit line. The looping magnetic field can couple with the magnetic field of the free layer for enhanced stability with respect to stray magnetic fields and elevated temperatures.

Hugh C. Hiner

Papers

Magnetic heads for perpendicular recording with trapezoidal pole tips

Magnetic head with low stack height and self-aligned pole tips

Spin-dependent tunneling sensor suitable for a magnetic memory

Inductive transducer with stitched pole tip and pedestal defining zero throat height

Magnetic tunnel junction MRAM with improved stability