Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application The compound semiconductor may be represented by a chemical formula: In x M y Co 4-m-a A m Sb 12-n-z-b X n Q z , where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0≦y<1, 0≦m≦1, 0≦a≦1, 0≦n<9, 0≦z≦4, 0≦b≦3 and 0<n+z+b

Compound semiconductors and their application

Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1      Bi l-x M x Cu l-w T w O a-y Ql y Te b Se z 
where, in Chemical Formula 1, M is at least one selected from the group consisting Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Ql is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0≤x<1, 0<w<1, 0.2<a<1.5, 0≤y<1.5, 0≤b<1.5 and 0≤z<1.5.

Novel compound semiconductor and use thereof

The present invention provides a nanocomposite thermoelectric material which includes: a primary phase including Bi, Te, and Se at a certain composition; and a secondary phase including Cu and Te at a certain composition. The nanocomposite thermoelectric material of the present invention shows an increased seebeck coefficient and decreased heat conductivity at the same time. So, the nanocomposite thermoelectric material shows an excellent performance index increase effect and can be usefully used for the implementation of a thermoelement with high efficiency.

Nanocomposite thermoelectric material and process for preparing the same

The invention relates to the field of two-dimensional material preparation, and particularly discloses a preparation method of a TaTe2 (Telluride Tantalum) two-dimensional material. The preparation method is characterized in that TaCl5 and Te powder are heated to volatilize and grow on the surface of a substrate to prepare the TaTe2 two-dimensional material at the deposition temperature of 620 to700 DEG C under the action of a carrier gas, wherein the carrier gas is a mixed atmosphere of a protective gas and H2; the flow rate of the protective gas is 20 to 40 sccm; the flow rate of the H2 is5 to 10 sccm. The invention also discloses the TaTe2 two-dimensional material prepared by the preparation method, and application of the material in preparation of optical devices. According to the preparation method of the TaTe2 two-dimensional material, the technical problems that the activity of Te is low and the two-dimensional material is difficult to prepare are solved; the TaTe2 two-dimensional material is successfully synthesized for the first time; moreover, through a great number of researches, the TaTe2 two-dimensional material with excellent performance is prepared.

Synthesis and application of TaTe2 (Telluride Tantalum) two-dimensional material

Provided are: a compound semiconductor thermoelectric material, having excellent thermoelectric conversion performance by having an excellent power factor and ZT value, and in particular, having excellent thermoelectric conversion performance at a low temperature; a method for manufacturing the same; and a thermoelectric module, a thermoelectric generator, or a thermoelectric cooling device, etc using the same The compound semiconductor thermoelectric material according to the present invention comprises: an n-type compound semiconductor matrix; and n-type particles which are dispersed in the matrix, are compound semiconductors which are different from the matrix, and have an average particle diameter of 1 micrometer to 100 micrometers

Compound semiconductor thermoelectric material and method for manufacturing same

PURPOSE: Nanocomposite thermoelectric materials, a thermoelectric module, and a thermoelectric device including the same are provided to reduce lattice thermal conductivity by enabling electrons to pass through and diffusing phonon at the interface of a thermoelectric matrix. CONSTITUTION: Nanocomposite thermoelectric materials include a thermoelectric matrix and metal nanoparticles. The nanoparticles are diffused on the surface or the interface of the thermoelectric matrix. The work function difference between the metal nanoparticles and the thermoelectric matrix is below ±1.0 eV. The work function of the metal nanoparticels is 3.5 eV to 5.5 eV. [Reference numerals] (AA,GG) Metal nanoparticle; (BB,II) Bi-Te alloy matrix; (CC) Interface; (DD) Scattering of long-wavelength phonons; (EE) Thermal conductivity °C; (FF) Highly conductive metal : e- conductivity ↑; (HH) Carrier filtering effect at a nano metal/alloy interface : Seebeck coefficient ↑

Thermoelectric nano-composite, and thermoelectric module and thermoelectric apparatus comprising same

PURPOSE: A thermoelectric material, a thermoelectric device, and a thermoelectric module are provided to improve thermoelectric conversion efficiency by introducing metal hydroxide or nanosheet of a layered structure. CONSTITUTION: A thermoelectric material includes a thermoelectric semiconductor and a nanosheet. The nanosheet has a layered structure and includes layered materials with metal hydroxide. The thickness of the nanosheet is 0.1 to 10 nm. A distance between layers is 1 to 40 A. An average area of the nanosheet is 0.0001 to 100 um^2. [Reference numerals] (AA) Bulk thermoelectric material; (BB) Introduction of nanosheets; (CC) Complexation; (DD) Nanosheet; (EE) Thermoelectric nanocomposite

Thermoelectric material, thermoelectric element, and thermoelectric module

A thermoelectric material having high efficiency, a thermoelectric element including the same, and a thermoelectric element module are provided. The thermoelectric reduces specific thermal conductivity by forming grain boundary ego density interface misfit potential between a thermoelectric matrix and a metal additive or thermoelectric grain in order to be used for various thermoelectric devices.

Thermoelectric material having high-density interface misfit dislocation, and thermoelectric device and module comprising the same

PURPOSE: A thermoelectric materials, a thermoelectric device and a method for manufacturing the same are provided to shift Fermi energy to a position where the effective mass of an electron increases, and improve thermoelectric performances CONSTITUTION: Bi, Sb, M, Te, and Se are mixed to form a mixture of a preset composition ratio The mixture is fused The fused mixture is cooled to form an alloy of a preset composition The alloy is pulverized The pulverized alloy is sintered The diameter of the pulverized alloy is 50 micron or less [Reference numerals] (AA) Performance index, ZT; (BB) Temperature, T(K)

Thermoelectric materials, thermoelectric device and method for manufacturing the same

The present invention provides a conductive thin film, which is represented by chemical formula 1 or 2, and comprises a compound having a stratified crystal structure The present invention further provides an electronic device comprising the conductive thin film In the chemical formula 1, Me refers to titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), tantalum (Ta), or niobium (Nb) In the chemical formula 2, Me refers to vanadium (V) or tantalum (Ta)

Hwang Sung Woo

Papers

Thermoelectric nano-composite, and thermoelectric module and thermoelectric apparatus comprising same

Thermoelectric material, thermoelectric element, and thermoelectric module

Thermoelectric material having high-density interface misfit dislocation, and thermoelectric device and module comprising the same

Thermoelectric materials, thermoelectric device and method for manufacturing the same

Electrically conductive thin films and electronic devices including the same