An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An intelligent automated assistant system engages with the user in an integrated, conversational manner using natural language dialog, and invokes external services when appropriate to obtain information or perform various actions. The system can be implemented using any of a number of different platforms, such as the web, email, smartphone, and the like, or any combination thereof. In one embodiment, the system is based on sets of interrelated domains and tasks, and employs additional functionally powered by external services with which the system can interact.

Intelligent Automated Assistant

A virtual assistant uses context information to supplement natural language or gestural input from a user. Context helps to clarify the user's intent and to reduce the number of candidate interpretations of the user's input, and reduces the need for the user to provide excessive clarification input. Context can include any available information that is usable by the assistant to supplement explicit user input to constrain an information-processing problem and/or to personalize results. Context can be used to constrain solutions during various phases of processing, including, for example, speech recognition, natural language processing, task flow processing, and dialog generation.

Using context information to facilitate processing of commands in a virtual assistant

A method and apparatus are provided for building an intelligent automated assistant. Embodiments of the present invention rely on the concept of “active ontologies” (e.g., execution environments constructed in an ontology-like manner) to build and run applications for use by intelligent automated assistants. In one specific embodiment, a method for building an automated assistant includes interfacing a service-oriented architecture that includes a plurality of remote services to an active ontology, where the active ontology includes at least one active processing element that models a domain. At least one of the remote services is then registered for use in the domain.

Method and apparatus for building an intelligent automated assistant

The method includes automatically, without user input and without regard to whether a digital assistant application has been separately invoked by a user, determining that the electronic device is in a vehicle. In some implementations, determining that the electronic device is in a vehicle comprises detecting that the electronic device is in communication with the vehicle (e.g., via a wired or wireless communication techniques and/or protocols). The method also includes, responsive to the determining, invoking a listening mode of a virtual assistant implemented by the electronic device. In some implementations, the method also includes limiting the ability of a user to view visual output presented by the electronic device, provide typed input to the electronic device, and the like.

Automatically adapting user interfaces for hands-free interaction

A thin film transistor having an offset or a lightly doped drain (LDD) structure by self alignment and a method of fabricating the same comprises a substrate, a silicon layer disposed on the substrate and including a channel region, a source region and a drain region at both sides of the channel region, and offset regions, each offset regions disposed between the channel region and one of the source and drain regions at both sides of the channel region, a gate insulating layer covering the channel region and the offset regions disposed at both sides of the channel region excluding the source and drain regions, and a gate layer formed on the channel region excluding the offset regions. The thin film transistor has the structure in which an offset or LDD is obtained without an additional mask process.

Thin film transistor and method of fabricating the same

A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.

Poly-si thin film transistor and organic light-emitting display having the same

A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.

Hyuk Lim

Papers

Thin film transistor and method of fabricating the same

Poly-si thin film transistor and organic light-emitting display having the same

Method of preparing semiconductor film on a substrate

Fabrication method of si film

Method of fabricating a capacitor