H
Hyunbo Shin
Researcher at Samsung
Publications - 11
Citations - 175
Hyunbo Shin is an academic researcher from Samsung. The author has contributed to research in topics: Layer (electronics) & Amorphous silicon. The author has an hindex of 6, co-authored 11 publications receiving 175 citations.
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Patent
Method for making a capacitor having an electrode surface with a plurality of trenches formed therein
TL;DR: In this article, the surface area of the capacitor electrode is remarkably enhanced such that the integrity of DRAMs is more improved, by using a polysilicon layer having a rough surface after a nonconductive layer is applied to a base substrate.
Patent
Method of making capacitor
TL;DR: In this article, a capacitor includes a first conductive layer having a plurality of cylindrical sections, dielectric film formed along the surface of the cylinders, and a second conductive substrate formed thereon.
Patent
Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby
TL;DR: In this article, the size of the hemispherical grains can be adjusted such that the sizes of HSGs formed on the inner surface of a U-shaped lower electrode or on the top of a stacked lower electrode are larger than that of the HSGs created on the outer surface of the U-shape lower electrode.
Patent
Dual source gas methods for forming integrated circuit capacitor electrodes
TL;DR: In this article, a silicon layer is formed on an integrated circuit substrate using silane and disilane to increase a step coverage for the silicon layer, increasing a deposition rate for the Silicon layer, reducing variability of the deposition rate, and reducing local crystallization of the silicon layers.
Patent
Methods of forming hemispherical grained silicon layers including anti-nucleation gases
Hyunbo Shin,Jong-Young Kim +1 more
TL;DR: In this article, a hemispherical grained silicon layer is formed on the amorphous silicon layer opposite the substrate by exposing the integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas.