In this article we review the experimental and theoretical investigations of the linear and nonlinear optical properties of semiconductor quantum well structures, including the effects of electrostatic fields, extrinsic carriers and real or virtual photocarriers.

Linear and nonlinear optical properties of semiconductor quantum wells

Power semiconductor devices, such as insulated-gate bipolar transistors, metal-oxide-semiconductor field-effect transistors, and static-induction thyristors, are used in different kinds of pulsed power generators developed for different applications. In addition, the semiconductor opening switch is found to have very effective applications in pulsed power generation by inductive energy storage. Semiconductor switches have greatly extended the scales of pulsed power parameters, especially in repetition rate and lifetime. They have also enabled new areas of pulsed power applications, such as accelerators, flue-gas treatment, and gas lasers.

Compact solid-State switched pulsed power and its applications

A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected with the input port and the output port. The tunneling junction is configured in a way (i) which provides electrons in a particular energy state within the structure, (ii) which produces surface plasmons in response to the input signal, (iii) which causes the structure to act as a waveguide for directing at least a portion of the surface plasmons along a predetermined path toward the output port such that the surface plasmons so directed interact with the electrons in a particular way, and (iv) which produces at the output port an output signal resulting from the particular interaction between the electrons and the surface plasmons.

Surface plasmon devices

The electron tunneling device includes first and second non-insulating layers spaced apart such that a given voltage can be provided therebetween. The device also includes an arrangement disposed between the non-insulating layers and configured to serve as a transport of electrons between the non-insulating layers. This arrangement includes a first layer of an amorphous material such that using only the first layer of amorphous material in the arrangement would result in a given value of a parameter in the transport of electrons, with respect to the given voltage. The arrangement further includes a second layer of material, which is configured to cooperate with the first layer of amorphous material such that the transport of electrons includes, at least in part, transport by tunneling, and such that the parameter, with respect to the given voltage, is increased above the given value of the parameter.

Metal-oxide electron tunneling device for solar energy conversion

New laser data on orthorhombic YAlO 3 :Er 3+ crystals are obtained. Stimulated emission in the 4 S 3/2 → 5 I 15/2 channel and cascase lasing of the sequential intermanifold 4 S 3/2 → 4 I 11/2 → 4 I 13/2 transitions are excited at 110 K with Xe-flashlamp pumping. Intensity absorption and luminescence characteristics of Er 3+ ions in the YAlO 3 crystal are experimentally determined and quantitatively analyzed in terms of the known semiempirical method. The intensity spectroscopic parameters Ω t obtained (Ω 2 = 0.95, Ω 4 = 0.58, and Ω 6 = 0.55 (in 10 -2 cm 2 )) nicely describe band-area intensities in the absorption spectrum of the YAl0 3 :Er 3+ crystal in the spectral region below 30000 cm -1 . A full set of reduced-matrix elements for the Er 3+ ions is calculated involving all 41 J-manifolds of the 4f 11 configuration lying in energy up to 97000 cm -1 . Using these data, the earlier reported intensity parameter Ω t for the YAlO 3 :Er 3+ crystal are revised and it is shown that involving highly excited levels of Er 3+ ions into intensity spectroscopic analysis leads to an overestimation of the parameters Ω 1 because of the possible presence of some additional absorption sources in the YAlO 3 host.

New laser properties and spectroscopy of orthorhombic crystals YAlO3:Er3+. Intensity luminescence characteristics, stimulated emission, and full set of squared reduced‐matrix elements |〈α[SL] J| |U(t)||α′[S′ L′] J′〉|2 for Er3+ Ions

A review is given of the current status of the self-induced transparency effect. The McCall–Hahn theory (2π pulses) is considered and its generalization to the case of phase modulation of radiation pulses, degeneracy of transitions, and two-photon resonance is discussed. The relationship with the theory of nonlinear waves, obeying the Korteweg–de Vries equation, is pointed out. The possibility of similar coherent effects in direct interband transitions in semiconductors is discussed. A summary is given of the experimental results demonstrating a strong fall in the absorption and a considerable slowing down of light pulses, typical of the self-induced transparency. Possible physical applications of the effect, based on these properties, are discussed.

http://iopscience.iop.org/article/10.1070/PU1975v017n05ABEH004365/pdf

Self-induced transparency effect

A theory is given of the resonant interaction between an ultrashort coherent light pulse and a semiconductor, which occurs when the pulse duration is less than the polarization or phase memory relaxation time. It is shown that, under certain conditions, a stationary 2? pulse can form. Numerical estimates of the velocity of propagation of a stable pulse are obtained for a typical semiconductor.

Passage of an ultrashort coherent light pulse through a semiconductor

An analysis is made of the evolution of high-power laser pulses in the case of coherent two-photon interaction with resonant media. It is shown that pulses of frequencies ω0 and ωs satisfying the equalit ω0±ω0=ω21 (ω21 is the resonance frequency of the medium) experience splitting into separate subpulses followed by a reduction in their duration and increase in their power. The efficiency of this process depends on the initial ratio of the amplitudes E0 and Es. It is shown that such effects can be observed in paramagnetic acoustic resonance.

Coherent effects during propagation of ultrashort light pulses in a medium under two-photon interaction conditions

An experimental study was made of the amplification of surface plasma oscillations due to a negative differential resistance of an Au–Al2O3–In2O3–Al2O3–In2O3–Al2O3–Ag structure resulting from resonance tunneling of electrons in a periodic potential field of a complex insulator barrier in this metal–barrier–metal structure.

Amplification of surface plasma oscillations in complex metal-barrier-metal structures

This part of the review deals with coherent effects in the interaction of ultrashort light pulses with media characterized by degenerate transitions, including semiconducting media (in the direct band-band transition region), and with media exhibiting two-photon resonances. It is shown that the self-induced transparency can appear under such conditions and the properties of this effect are studied. A review is made of experimental investigations of the coherent bleaching of various media. The paper ends with a list of the most urgent problems requiring clarification.

I A Poluéktov

Papers

Self-induced transparency effect

Passage of an ultrashort coherent light pulse through a semiconductor

Coherent effects during propagation of ultrashort light pulses in a medium under two-photon interaction conditions

Amplification of surface plasma oscillations in complex metal-barrier-metal structures

Coherent effects in the propagation of ultrashort light pulses in resonant media. Part II (Review)