A minimal basis semi-ab initio approach to the band structures of semiconductors

A review is given on investigations of lattice structures, electrical and optical properties of boron and boron compounds (crystalline boron modifications and their compound analogs, rare-earth compounds, Asup(III)Bsup(V)compounds).

Boron and boron-based semiconductors

The empirical tight-binding method is used to investigate the electronic structure of the zinc-blende boron compounds BN, BP and BAs. Results are given for band structures, ionicity factors and elastic constants. The electronic structure of the boron compounds exhibits features that differ from those of the other III–V materials. In particular we found that these compounds are characterized by a strong cation-anion s–s repulsion effect. The calculated ionicity shows a weak charge transfer effect for BP and BAs which makes these compounds as the prototype covalent materials of the III–V family, while BN is found more ionic.

Electronic structure of BN, BP and BAs

Investigation of X-ray spectra of hexagonal and cubic boron nitride

Dr. Qiye Zheng, Prof. Pinshane Y. Huang, and Prof. David G. Cahill Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA E-mail: d-cahill@illinois.edu Yinchuan Lv Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA Dr. Sheng Li, Xiaoyuan Liu, and Prof. Bing Lv E-mail: blv@utdallas.edu Department of Physics, The University of Texas at Dallas, Richardson, TX 75080 USA Dr. Chunhua Li, Prof. David A. Broido Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA

I.I. Zhukova

Papers

Investigation of the energy band structure of boron phosphide by ultra-soft X-ray spectroscopy