There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

In solid-state materials with strong relativistic spin-orbit coupling, charge currents generate transverse spin currents. The associated spin Hall and inverse spin Hall effects distinguish between charge and spin current where electron charge is a conserved quantity but its spin direction is not. This review provides a theoretical and experimental treatment of this subfield of spintronics, beginning with distinct microscopic mechanisms seen in ferromagnets and concluding with a discussion of optical-, transport-, and magnetization-dynamics-based experiments closely linked to the microscopic and phenomenological theories presented.

Spin Hall effects

Physical Review B

Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport, supercurrent transport has also been observed. Graphene might also be a promising material for spintronics and related applications, such as the realization of spin qubits, owing to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. Here we report the observation of spin transport, as well as Larmor spin precession, over micrometre-scale distances in single graphene layers. The 'non-local' spin valve geometry was used in these experiments, employing four-terminal contact geometries with ferromagnetic cobalt electrodes making contact with the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals that reflect the magnetization direction of all four electrodes, indicating that spin coherence extends underneath all of the contacts. No significant changes in the spin signals occur between 4.2 K, 77 K and room temperature. We extract a spin relaxation length between 1.5 and 2 mum at room temperature, only weakly dependent on charge density. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around ten per cent.

/pdf/electronic-spin-transport-and-spin-precession-in-single-4whb0a6dvo.pdf

Electronic spin transport and spin precession in single graphene layers at room temperature

The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other 2D materials

Graphene Spintronics

The spin lifetime and diffusion length of electrons are transport parameters that define the scale of coherence in spintronic devices and circuits. As these parameters are many orders of magnitude larger in semiconductors than in metals, semiconductors could be the most suitable for spintronics. So far, spin transport has only been measured in direct-bandgap semiconductors or in combination with magnetic semiconductors, excluding a wide range of non-magnetic semiconductors with indirect bandgaps. Most notable in this group is silicon, Si, which (in addition to its market entrenchment in electronics) has long been predicted a superior semiconductor for spintronics with enhanced lifetime and transport length due to low spin-orbit scattering and lattice inversion symmetry. Despite this promise, a demonstration of coherent spin transport in Si has remained elusive, because most experiments focused on magnetoresistive devices; these methods fail because of a fundamental impedance mismatch between ferromagnetic metal and semiconductor, and measurements are obscured by other magnetoelectronic effects. Here we demonstrate conduction-band spin transport across 10 mum undoped Si in a device that operates by spin-dependent ballistic hot-electron filtering through ferromagnetic thin films for both spin injection and spin detection. As it is not based on magnetoresistance, the hot-electron spin injection and spin detection avoids impedance mismatch issues and prevents interference from parasitic effects. The clean collector current shows independent magnetic and electrical control of spin precession, and thus confirms spin coherent drift in the conduction band of silicon.

Electronic measurement and control of spin transport in Silicon

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

Coherent spin transport through a 350 micron thick silicon wafer.

A symmetry analysis of the band structure of monolayer black phosphorus (phosphorene) reveals the mechanism responsible for valence band distortion and possible lack of a true direct band gap. This theory should provide guidance for experiments on this new material, especially when single phosphorene layers can be made for device processing.

Electrons and holes in phosphorene

Recent advances in successful operation of silicon-based devices where transport is dependent on electron magnetic moment, or “spin”, could provide a path to a future alternative for logic processing. The basics of this spin-based electronics technology are discussed and the specific methods necessary for application to silicon are described. Mirroring the Haynes-Shockley experiment, which was used sixty years ago to measure minority-carrier transport parameters in semiconductors, here we have used a four-terminal device to make fundamental measurements of spin transport parameters.

http://ieeexplore.ieee.org/iel5/4832838/4897524/04897526.pdf

Silicon spintronics

The electron number parity of the ground state of a semiconductor nanowire proximity coupled to a bulk superconductor can alternate between the quantized values $\ifmmode\pm\else\textpm\fi{}1$ if parameters such as the wire length $L$, the chemical potential $\ensuremath{\mu}$, or the magnetic field $B$ are varied inside the topological superconductor phase. The parity jumps, which may be interpreted as changes in the occupancy of the fermion state formed from the pair of Majorana modes at opposite ends of the wire, are accompanied by jumps $\ensuremath{\delta}N$ in the charge of the nanowire, whose values decrease exponentially with the wire length. We study theoretically the dependence of $\ensuremath{\delta}N$ on system parameters, and compare the locations in the $\ensuremath{\mu}\text{\ensuremath{-}}B$ plane of parity jumps when the nanowire is or is not proximity coupled to a bulk superconductor. We show that, despite the fact that the wave functions of the Majorana modes are localized near the two ends of the wire, the charge-density jumps have spatial distributions that are essentially uniform along the wire length, being proportional to the product of the two Majorana wave functions. We explain how charge measurements, say by an external single-electron transistor, could reveal these effects. Whereas existing experimental methods require direct contact to the wire for tunneling measurements, charge sensing avoids this issue and provides an orthogonal measurement to confirm recent experimental developments. Furthermore, by comparing density of states measurements which show Majorana features at the wire ends with the uniformly distributed charge measurements, one can rule out alternative explanations for earlier results. We shed light on a parameter regime for these wire-superconductor hybrid systems, and propose a related experiment to measure spin density.

/pdf/detecting-majorana-modes-in-one-dimensional-wires-by-charge-j6h3k8uju4.pdf

Ian Appelbaum

Papers

Electronic measurement and control of spin transport in Silicon

Coherent spin transport through a 350 micron thick silicon wafer.

Electrons and holes in phosphorene

Silicon spintronics

Detecting Majorana modes in one-dimensional wires by charge sensing