This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

We measured the elastic properties and intrinsic breaking strength of free-standing monolayer graphene membranes by nanoindentation in an atomic force microscope. The force-displacement behavior is interpreted within a framework of nonlinear elastic stress-strain response, and yields second- and third-order elastic stiffnesses of 340 newtons per meter (N m(-1)) and -690 Nm(-1), respectively. The breaking strength is 42 N m(-1) and represents the intrinsic strength of a defect-free sheet. These quantities correspond to a Young's modulus of E = 1.0 terapascals, third-order elastic stiffness of D = -2.0 terapascals, and intrinsic strength of sigma(int) = 130 gigapascals for bulk graphite. These experiments establish graphene as the strongest material ever measured, and show that atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.

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Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

Graphene is a wonder material with many superlatives to its name. It is the thinnest known material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have zero effective mass, and can travel for micrometers without scattering at room temperature. Graphene can sustain current densities six orders of magnitude higher than that of copper, shows record thermal conductivity and stiffness, is impermeable to gases, and reconciles such conflicting qualities as brittleness and ductility. Electron transport in graphene is described by a Dirac-like equation, which allows the investigation of relativistic quantum phenomena in a benchtop experiment. This review analyzes recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.

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Graphene: Status and Prospects

Problems associated with large-scale pattern growth of graphene constitute one of the main obstacles to using this material in device applications. Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides. However, the sheet resistance of these films was found to be much larger than theoretically expected values. Here we report the direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers, and present two different methods of patterning the films and transferring them to arbitrary substrates. The transferred graphene films show very low sheet resistance of approximately 280 Omega per square, with approximately 80 per cent optical transparency. At low temperatures, the monolayers transferred to silicon dioxide substrates show electron mobility greater than 3,700 cm(2) V(-1) s(-1) and exhibit the half-integer quantum Hall effect, implying that the quality of graphene grown by chemical vapour deposition is as high as mechanically cleaved graphene. Employing the outstanding mechanical properties of graphene, we also demonstrate the macroscopic use of these highly conducting and transparent electrodes in flexible, stretchable, foldable electronics.

Large-scale pattern growth of graphene films for stretchable transparent electrodes

We demonstrate a reverse design method for realizing a broad range of optical filters based on integrated optical waveguides and experimentally verify example designs on a CMOS-compatible silicon-on-insulator (SOI) platform. The reflectance-based filters allow for control of both phase and amplitude of the optical response. Among this device’s many potential applications we highlight and numerically demonstrate its use for ultrafast on-chip pulse shaping.

Nearly arbitrary on-chip optical filters for ultrafast pulse shaping.

Dispersion engineering enables phase matching for nonlinear down conversion from 775nm to the telecom c-band in lithium niobite microdisk resonators without periodic poling. High rates of spontaneous creation of entangled photon pairs is observed.

Entangled photon generation in lithium niobate microdisk resonators through spontaneous parametric down conversion

We are building prototype chip-scale low-power integrated-optic gas-phase chemical sensors based on mid-infrared
(3-5μm) Tunable Diode Laser Absorption Spectroscopy (TDLAS). TDLAS is able to sense many gas phase chemicals
with high sensitivity and selectivity. Novel gas sensing elements using low-loss resonant photonic crystal cavities or
waveguides will permit compact integration of a laser source, sampling elements, and detector in configurations suitable
for inexpensive mass production. Recently developed Interband Cascade Lasers (ICLs) that operate at room temperature
with low power consumption are expected to serve as monochromatic sources to probe the mid-IR molecular spectral
transitions. Practical challenges to fabricating these sensors include: a) selecting and designing the high-Q microresonator
sensing element appropriate for the selected analyte; b) coupling laser light into and out of the sensing
element; and c) device thermal management, especially stabilizing laser temperature with the precision needed for
sensitive spectroscopic detection. This paper describes solutions to these challenges.

Progress toward mid-IR chip-scale integrated-optic TDLAS gas sensors

An electro-holographic light field generator device is disclosed. The light field generator device has an optical substrate with a waveguide face and an exit face. One or more surface acoustic wave (SAW) optical modulator devices are included within each light field generator device. The SAW devices each include a light input, a waveguide, and a SAW transducer, all configured for guided mode confinement of input light within the waveguide. A leaky mode deflection of a portion of the waveguided light, or diffractive light, impinges upon the exit face. Multiple output optics at the exit face are configured for developing from each of the output optics a radiated exit light from the diffracted light for at least one of the waveguides. An RF controller is configured to control the SAW devices to develop the radiated exit light as a three-dimensional output light field with horizontal parallax and compatible with observer vertical motion.

SAW modulators and light steering methods

Wavelength-scale, high Q-factor photonic crystal cavities have emerged as a platform of choice for on-chip manipulation of optical signals, with applications ranging from low-power optical signal processing and cavity quantum electrodynamics, to biochemical sensing. Many of these applications, however, are limited by the fabrication tolerances and the inability to precisely control the resonant wavelength of fabricated structures. Various techniques for post-fabrication wavelength trimming and dynamical wavelength control -- using, for example, thermal effects, free carrier injection, low temperature gas condensation, and immersion in fluids -- have been explored. However, these methods are often limited by small tuning ranges, high power consumption, or the inability to tune continuously or reversibly. In this letter, by combining nano-electro-mechanical systems (NEMS) and nanophotonics, we demonstrate reconfigurable photonic crystal nanobeam cavities that can be continuously and dynamically tuned using electrostatic forces. A tuning of ~10 nm has been demonstrated with less than 6 V of external bias and negligible steady-state power consumption.

Ian W. Frank

Papers

Nearly arbitrary on-chip optical filters for ultrafast pulse shaping.

Entangled photon generation in lithium niobate microdisk resonators through spontaneous parametric down conversion

Progress toward mid-IR chip-scale integrated-optic TDLAS gas sensors

SAW modulators and light steering methods

Dynamically Reconfigurable Photonic Crystal Nanobeam Cavities