Developing reversible lithium metal anodes with high rate capability is one of the central aims of current battery research. Lithium metal anodes are not only required for the development of innova...

Physicochemical Concepts of the Lithium Metal Anode in Solid-State Batteries.

Advances in selective conversions by heterogeneous photocatalysis.

This Review highlights the application of high-temperature solutions for exploratory crystal growth and materials discovery of novel complex oxides. It provides an overview of the method of flux crystal growth of complex oxides and can function as a "how to" guide for those interested in oxide crystal growth. The most commonly used fluxes are discussed in terms of their applicability for dissolving specific elements and the typical reaction conditions are compiled. A large variety of recent quaternary and higher oxides that have been grown as crystals from fluxes are used to illustrate the power of the flux method to grow oxide crystals containing specific elements.

Materials discovery by flux crystal growth: quaternary and higher order oxides.

Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The correct interpretation of NC can be based on the analysis of the time-domain transient current in response to a small voltage step or impulse, involving a self-consistent treatment of all relevant physical effects (carrier transport, injection, recharging, etc.). NC appears in the case of the nonmonotonic or positive-valued behavior of the time-derivative of the transient current in response to a small voltage step. The time-domain transient current approach is illustrated by simulation results and experimental studies of quantum well infrared photodetectors (QWIPs). The NC effect in QWIPs has been predicted theoretically and confirmed experimentally. The huge NC phenomenon in QWIP's is due to the nonequilibrium transient injection from the emitter caused by the properties of the injection barrier and the inertia of the QW recharging.

Negative capacitance effect in semiconductor devices

Ichiro Taniguchi

Papers

Roughening transition for the ionic-electronic mixed superionic conductor α-Ag2S

ac ionic conductivity of hollandite type compounds from 100 Hz to 37.0 GHz

Negative Capacitance of Silicon Diode with Deep Level Traps

Phase transition and cluster formation in silver selenide

Frequency-independent ionic conductivity of hollandite type compounds