PURPOSE:To facilitate substantial reduction of an afterimage by a method wherein a photodiode and a reading gate are provided and a first n -type region in which the photoelectric conversion and charge storage of the photodiode are performed and a second n -type region formed by a self-alignment technology with the gate electrode of the reading gate transistor as a mask are provided. CONSTITUTION:After a substrate P -type region 4, a photodiode n -type region 2, a CCD n -type region 5, a CCD p -type region 6, an isolation P -type region 7, a gate insulating film 8 and a polycrystalline silicon gate 9 are formed on an n-type silicon substrate 3, a reading n -type region (second n -type region) 1 is formed in a self-alignment manner with the polycrystalline gate 9 by using a photomask. Further, in the same way, a photodiode P -type region 10 is formed in a self-alignment manner with the polycrystalline silicon gate 9 by using a photomask. As the lower part of the second n -type region 1 is connected to the photodiode n -type region 2, the potential of the photodiode and the source region of the reading transistor shows a smooth monotonous increasing curve distribution.

Solid-state image pickup device

PURPOSE:To improve a controllable current by exposing a pn junction between a second conductivity type emitter layer and a low impurity concentration first conductivity type layer on the surface of an epitaxial layer. CONSTITUTION:A p-type emitter layer 1 and a p type base layer 3 are formed on an N-type silicon substrate by an impurity diffusion, and the layer part of as an original substrate is retained as an n-type base layer 2. A low impurity concentration p type epitaxial layer 4 is laminated on the substrate, and an n-type emitter layer 5 is formed on the layer by an impurity diffusion from the surface. A p type contact layer 10 arriving at the layer 3 from the surface of the layer 4 is formed around the layer 5. A cathode electrode 7 is brought into contact with the layer 5 in the opening of an oxide film 9, a gate electrode 8 is brought into contact with the layer 10, and an anode electrode 6 is brought into contact with the layer 1. Thus, an irregularity in a reverse voltage resis tance between the gate and the emitter electrode between diffused emitter electrodes can be reduced.

Epitaxial gate turn off thyristor

PROBLEM TO BE SOLVED: To provide a linear shape steel sheet pile which can be easily and securely welded even to an H steel which has its flange slightly deformed, without requiring much time for welding-positioning work when welded to and combined with the H steel, and without being displaced during the welding work. SOLUTION: The linear shape steel sheet pile has a web portion 2 at a widthwise central portion thereof and joint portions 3 at both right and left end portions. The right and left joint portions 3 are right and left symmetrical, and the linear shape steel sheet pile is provided with a protrusion 4 protruding toward both sides of the web portion at a location between the web portion and each joint portion. Alternatively, the linear shape steel sheet pile may further have a plurality of protruding bars 2A on both the sides of the web portion.

Linear shape steel sheet pile

An alignment master glass for aligning a plurality of openings of a vapor deposition mask for tensioning the vapor deposition mask, the alignment master glass includes a transparent substrate, and reflective film patterns on at least one surface of the transparent substrate, the reflective film patterns being only at locations corresponding to the plurality of openings of the vapor deposition mask.

Alignment master glass for tensioning vapor deposition mask, method for manufacturing the same, and method for tensioning vapor deposition mask using the same

PURPOSE:To secure the passage of light of expanding the part of a film body where light can passes at a position where the passage of light needs to be secured, and moving the soiled film part from the position and expanding a new part. CONSTITUTION:When the method and device are applied to a monitoring camera mounted on, for example, a refractory blowing robot, the monitoring camera 1 which photographs the finish state of refractories is put in the dust-proof case 9 for the camera. A device 3 which secures the passage of light is equipped with the film body 15, a payoff drum 17 wound with the film body 15, a take-up drum 19 for winding the film body 15, etc., and the film body 15 which transmits light is expanded in front of a glass window 13. Then when the refractories are blown, refractories which are scattered toward the monitor camera 1 stick on the part of the film body 15 exposed in an opening 2. The part stuck or the refractories is taken up by the take-up drum 19 and moved out of the opening part 250 to position the new part of the film body 15 in the opening part 2501. Consequently, the blowing state of the refractories can securely be photographed at all times.

Method and device for securing passage of light

PURPOSE:To accurately align by providing an elliptical convex reflecting mirror between a diffraction grating and a detector which receives a diffracted light from the grating, simultaneously receiving a plurality of next diffracted lights by the detector to simplify the construction of the detector, thereby enhancing S/N of a detection signal CONSTITUTION:A diffraction grating 4 and the light receiving surface of a detector 10 exist at the focus position of an elliptical convex reflecting mirror 11, and the reflecting surface of the mirror 11 has width for reflecting the primary tertiary diffracted lights 8a-8c from the grating 4 Thus, the incident light to the detector 10 becomes approx twice as large as the case of only the primary diffracted light 8a to improve S/N by approx twice Since the transmitted light 5 is condensed in X direction to emit the grating 4, the emitting directions of the lights 8a, 8b are expanded, but condensed to the detector 10 by the mirror 11 due to the rotary elliptical convex surface to further improve the S/N With this simple construction, the positioning accuracy of a mask 1 using a linear Fresnel band target 2 and a wafer 3 can be improved

Method for aligning wafer and mask

PURPOSE:To accurately align masks by forming the surface of a semiconductor chip disposed under a Fresnel zone target formed on the mask in a projection or a recess. CONSTITUTION:The alignment mark 33 of a Fresnel zone target is formed in a predetermined semiconductor chip 32 formed by a scribing line 31. Recess regions 34 and projection regins 35 are repeatedly formed at a pitch l, for example, of 5mum on the periphery of the mark 33. When the size l' from the surface A of the region 34 to the surface B of the region 35 becomes 1/4 lambda, where lambda is the wavelength of alignment light. Thus, since the light arrived at the surface f a semiconductor wafer 1 through the surface of the mask 2 and reflected on the surface does not partly coincide with the light reflected on the surface of the mask, they do not extremely strengthen nor weaken each other. Therefore, a difficulty of the erasure of the spot of the Fresnel zone target on the mask can be avoided.

Treatment of semiconductor wafer

PURPOSE:To accurately measure a distance between a mask and a wafer at all times, by using the half-width of a bright line spectrum of a luminescent line for matching the position of the mask with that of the wafer CONSTITUTION:A mask 1 where prescribed linear Fresnel zone targets are formed and a wafer whereon diffraction gratings are formed are disposed opposite to each other, and then parallel beams 5 of light are projected from above the surface of the mask The beams of light diffracted by the linear Fresnel zone targets, which are converged on the wafer 2, are reflected by the diffraction gratings 4 on the wafer 2, and a spectrum of light is displayed While the displayed spectrum of light is varied in luminance and half-width according to a distance between the wafer 2 and the mask 1, the half-width can be detected irrespective of an absolute level, and therefore it can be used not only for matching the position of the mask 1 with that of the wafer 2, but also for measuring an arbitrary distance between the two

Iizuka Junichi

Papers

Method for aligning wafer and mask

Treatment of semiconductor wafer

Method of matching position of mask with position of wafer