The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant radiation mechanisms responsible for creating soft errors in terrestrial applications, and how these soft errors are generated by the collection of radiation-induced charge. The soft error sensitivity as a function of technology scaling for various memory and logic components is then presented with a consideration of which applications are most likely to require soft error mitigation.

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Radiation-induced soft errors in advanced semiconductor technologies

Ion acceleration driven by superintense laser pulses is attracting an impressive and steadily increasing effort. Motivations can be found in the applicative potential and in the perspective to investigate novel regimes as available laser intensities will be increasing. Experiments have demonstrated, over a wide range of laser and target parameters, the generation of multi-MeV proton and ion beams with unique properties such as ultrashort duration, high brilliance, and low emittance. An overview is given of the state of the art of ion acceleration by laser pulses as well as an outlook on its future development and perspectives. The main features observed in the experiments, the observed scaling with laser and plasma parameters, and the main models used both to interpret experimental data and to suggest new research directions are described.

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Ion acceleration by superintense laser-plasma interaction

The CRESST-II cryogenic Dark Matter search, aiming at detection of WIMPs via elastic scattering off nuclei in CaWO4 crystals, completed 730 kg days of data taking in 2011. We present the data collected with eight detector modules, each with a two-channel readout; one for a phonon signal and the other for coincidently produced scintillation light. The former provides a precise measure of the energy deposited by an interaction, and the ratio of scintillation light to deposited energy can be used to discriminate different types of interacting particles and thus to distinguish possible signal events from the dominant backgrounds.

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Results from 730 kg days of the CRESST-II Dark Matter search

GalliumNitridebasedhighelectronmobilitytransistors(HEMTs)areattractiveforuseinhighpowerandhighfrequencyapplications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20‐30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN‐based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain current relative to the other forms of radiation. In InGaN/GaN blue LEDs irradiated with protons at fluences near 10 14 cm −2 or electrons at fluences near 10 16 cm −2 , both current-voltage and light output-current characteristics are degraded with increasing proton dose. The optical performance of the LEDs is more sensitive to the proton or electron irradiation than that of the corresponding electrical performances. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any

https://iopscience.iop.org/article/10.1149/2.0251602jss/pdf

Review—Ionizing Radiation Damage Effects on GaN Devices

Experiments on the synthesis and identification of the nuclei 272111 and 277112 were performed in order to confirm previous results. Three additional decay chains were measured in the reaction 64Ni + 209Bi →273111*. The study revealed considerably improved data on the decay chain originating from 272111. One additional chain was measured in the reaction 70Zn + 208Pb →278112*. The decay properties of the chain starting at 277112 are in excellent agreement with the second chain of the first experiment down to 265Sg, where the new chain ends by a previously unknown spontaneous-fission branch. A re-analysis of all the data on elements 110, 111, and 112 measured at GSI since 1994 (a total of 34 decay chains was investigated) revealed that for 2 chains (the second chain of 269110 measured in 1994 and the first chain of 277112 measured in 1996) the results of the new analysis differed from the previous one. In all other cases the earlier data are exactly reproduced.

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J. F. Ziegler

Papers

Stopping and Range of Ions in Matter SRIM-2003