Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

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Gas-assisted focused electron beam and ion beam processing and fabrication

The technology of high‐resolution focused ion beams has advanced dramatically in the past 15 years as focusing systems have evolved from laboratory instruments producing minuscule current densities to high current density tools which have sparked an important new process: direct micromachining at the micrometer level. This development has been due primarily to the exploitation of field emission ion sources and in particular the liquid‐metal ion source. Originally developed in the early 1960’s as a byproduct of the development of electrostatic rocket engines, the liquid‐metal ion source was adapted for focused beam work in the late 1970’s, when it was demonstrated that submicrometer focused ion beams could be produced with current densities greater than 1 A cm−2. Ions can be produced with liquid‐metal ion sources from elements including Al, As, Au, B, Be, Bi, Cs, Cu, Ga, Ge, Fe, In, Li, P, Pb, Pd, Si, Sn, and Zn. In the past decade, focused ion beam systems with liquid‐metal ion sources have had a signific...

High‐resolution focused ion beams

Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolution microscopy and nano-fabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nano-structures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as Neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.

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Helium ion microscopy

Focused ion beam (FIB) machines are key tools for state-of-the art sample preparation in electron microscopy, for characterization and repair in material sciences, for the semiconductor industry and for nanotechnology in general. Liquid-metal ion sources (LMIS) are widely used in FIB machines because they meet the minimum ion source requirements such as source brightness and reliability. However, in FIB machines, noble gas ion sources are favorable for sputtering, beam-induced etching and deposition, because the implanted ions do not change the electrical behavior of the substrate significantly. There are several efforts by various researchers to develop noble gas ion sources that can be used in FIB machines instead of LMIS. The gas ion sources could not meet the minimum ion source requirements. Therefore, LMIS are still a popular choice among FIB machine users. This review article takes a critical look at the reported efforts in the literature to develop noble gas ion sources for FIB machines.

Quest for high brightness, monochromatic noble gas ion sources

In situ high voltage tem observation of an electrohydrodynamic (EHD) ion source

Operating parameters for a field‐ionization source have been measured. Sensitivities of 5×10−5 A sr−1 Torr−1 were found at 77 K. Angular distributions are uniform near ϑ=0° and show the beam to be confined to ±20°. The beam signal‐to‐noise ratio was found to increase with increasing current. Calculations based on parameters of lenses in use indicate a resolution of 0.1 μm at ≳10−10 A is possible.

J. H. Orloff

Papers

Study of a field‐ionization source for microprobe applications