Fast, high efficiency and low error single-photon sources are required for the implementation of a number of quantum information processing applications. The fastest triggered single-photon sources to date have been demonstrated using epitaxially grown semiconductor quantum dots (QDs), which can be conveniently integrated with optical microcavities. Recent advances in QD technology, including demonstrations of high temperature and telecommunications wavelength single-photon emission, have made QD single-photon sources more practical. Here we discuss the applications of single-photon sources and their various requirements, before reviewing the progress made on a QD platform in meeting these requirements.

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Engineered quantum dot single-photon sources.

The molecular‐beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device‐quality interfaces. Gallium‐primed growth on (211)‐oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy‐band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90%, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.

Molecular beam epitaxial growth of GaP on Si

Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and Ge

Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition

Imperfection (cracking, stress) in (0001)GaN/(0001)α‐Al2O3 grown by using the metalorganic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD) method is investigated. First, the epitaxial relation is confirmed by using the oscillating‐crystal method. Subsequently, imperfections, especially cracks, are observed in detail by optical microscopy and x‐ray diffraction topography. Cracking occurs at the layer thickness larger than 13 μm in the crystals having epitaxial layers of good quality, while it does not appear even at the thickness of 30 μm in crystals including inferior layers. Finally, stress in the layer and in the substrate are determined by measuring the warp of the wafer. Compressive stress in the good epitaxial layer is 1.6×109 dyne cm−2, and in this case, cracking occurs at the maximum tensile stress in the substrate less than 3×108 dyne cm−2. However, cracking does not occur even at the compressive stress of 3×109 dyne cm−2 in the inferior layer and at the tensile stress of 1×10...

J.P. André

Papers

HETEROEPITAXIAL GROWTH OF GaP ON SILICON