Reference LPI-ARTICLE-1999-017View record in Web of Science Record created on 2006-02-21, modified on 2017-05-12

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Metal Oxide Surfaces and Their Interactions with Aqueous Solutions and Microbial Organisms.

The contribution that the technique of ferromagnetic resonance (FMR) has made to the understanding of the magnetic behaviour of ultrathin single films is reviewed. Experimental methods to measure FMR in situ in ultrahigh vacuum are presented. The temperature dependence of the magnetization, of the magnetic relaxation rate in the vicinity of the Curie temperature, and of the second- and fourth-order magnetic anisotropy energy (MAE) constants can be measured by FMR in situ for magnetic monolayers. Using the cases of Ni/Cu(001) and Gd/W(110) as examples, the role of the MAE for the quantitative description of temperature- and thickness-dependent reorientation transitions of the magnetization is discussed. Initial results for the anisotropy of the g-factor which is related to the anisotropy of the orbital moment (and the MAE) are presented.

https://iopscience.iop.org/article/10.1088/0034-4885/61/7/001/pdf

Ferromagnetic resonance of ultrathin metallic layers

In this paper, we review some of the key concepts in ultrathin film magnetism which underpin nanomagnetism. We survey the results of recent experimental and theoretical studies of well characterized epitaxial structures based on Fe, Co and Ni to illustrate how intrinsic fundamental properties such as the magnetic exchange interactions, magnetic moment and magnetic anisotropies change markedly in ultrathin films as compared with their bulk counterparts, and to emphasize the role of atomic scale structure, strain and crystallinity in determining the magnetic properties. After introducing the key length scales in magnetism, we describe the 2D magnetic phase transition and survey studies of the thickness dependent Curie temperature and the critical exponents which characterize the paramagnetic–ferromagnetic phase transition. We next discuss recent experimental and theoretical results on the determination of the exchange constant, followed by an overview of measurements of the magnetic moment in the elemental 3d transition metal thin films in the various crystal phases that have been successfully stabilized, thereby illustrating the sensitivity of the magnetic moment to the local symmetry and to the atomic environment. Finally, we discuss briefly the magnetic anisotropies of Fe, Co and Ni in the fcc crystalline phase, to emphasize the role of structure and the details of the interface in influencing the magnetic properties. The dramatic effect that adsorbates can have on the magnetic anisotropies of thin magnetic films is also discussed. Our survey demonstrates that the fundamental properties, namely, the magnetic moment and magnetic anisotropies of ultrathin films have dramatically different behaviour compared with those of the bulk while the comparable size of the structural and magnetic contributions to the total energy of ultrathin structures results in an exquisitely sensitive dependence of the magnetic properties on the film structure.

https://iopscience.iop.org/article/10.1088/0034-4885/71/5/056501/pdf

Magnetism in ultrathin film structures

The high-symmetry ring geometry is shown to exhibit a wide range of intriguing magnetostatic and magnetodynamic properties, which we survey in this topical review. We consider first the patterning and deposition techniques, which are used to fabricate ring structures (diameters between 0.1 and 2??m) and discuss their respective advantages and disadvantages. The results of direct nanoscale imaging of the novel magnetization configurations present in rings with different geometrical parameters (including discs) are discussed. These results give valuable insight into the influence of the magnetic anisotropies governing the magnetic states. The different types of domain walls that arise are compared quantitatively to micromagnetic simulations. The magnetodynamic switching between the different magnetic states is described in detail. In particular we elaborate on the different geometry-dependent magnetic switchings, since the different transitions occurring allow us to determine which energy terms govern the reversal process. We discuss a process by which fast (sub-ns) and controlled switching can be achieved, therefore making rings an attractive geometry for applications, in addition to studying fundamental issues of nanomagnetism.

https://iopscience.iop.org/article/10.1088/0953-8984/15/21/201/pdf

Vortex formation in narrow ferromagnetic rings

The purpose of this article is to provide an overview of the surface structures of the clean surfaces of tetrahedrally coordinated semiconductors within the context of identifying the main features of their structural chemistry. We develop the point of view that the surface regions of these materials form twodimensional (2D) compounds whose bonding is constrained by the requirement of epitaxy with the substrate1 and that the coordination chemistry of these compounds differs from that of molecules or (three-dimensional) bulk solids in specific ways.2 Our coverage is confined to low-index faces. Specifically, our interest lies in the atomic geometries of ideal single-crystal regions of surfaces rather than in the morphology of surfaces with multiple domains, steps, or defects. Finally, although similar considerations have been applied to interpret oxide surface structures more generally,3 our attention herein is confined to tetrahedrally coordinated elemental and binary compound semiconductors. The traditional approach to constructing a review of this type is to consider each surface separately and to describe the structural studies4-11 or theoretical predictions of surface structure4-7,12,13 for each individual surface. This procedure offers an abundance of case histories, but little by way of guidance concerning how to make sense out of the wealth of Dr. Charles B. Duke is Senior Research Fellow at Xerox Corporation. Prior to holding this position, he was Deputy Director and Chief Scientist of the Pacific Northwest Division of the Battelle Memorial Institute and Affiliate Professor of Physics at the University of Washington. From 1972 to 1988 he held various technical and management positions at the Xerox Research Laboratories in Webster, NY and was an Adjunct Professor of Physics at the University of Rochester. During 1969−72, he was a Professor of Physics and member of the Materials Research Laboratory and Coordinated Science Laboratory at the University of Illinois in Urbana, IL, following six years as a staff member of the General Electric Corporate Research and Development Center in Schenectady, NY. He received his Ph.D. in physics from Princeton in 1963 following a B.S. Summa Cum Laude with distinction in mathematics from Duke University in 1959. He is a Fellow and an Honorary Member of the American Vacuum Society, a Fellow of the American Physical Society, a Fellow of the IEEE, and a life member of Sigma Xi. In 1977, Dr. Duke received the Medard W. Welch Award in Vacuum Science and Technology. In 1979 he served as President of the American Vacuum Society, and since 1979, as Treasurer of its Electronic Materials and Processing Division. He served on the Board of Directors of the American Vacuum Society for seven years. He was chairman of the 1977 Gordon Research Conference on the Chemistry and Physics of Solids and of the 1983 Gordon Research Conference on Organic Thin Films and Solid Surfaces. In 1981 he was named one of the ISI 1000 internationally most cited scientists. During 1985−86 he served as founding editor-in-chief of the Journal of Materials Research, the official journal of the Materials Research Society. From 1988 to 1992 and 1995 to 1997, he served (will be serving) on the council of the Materials Research Society, serving as Treasurer during 1991−2. In 1992 he was named editor of Surface Science. In 1993 he was elected to the National Academy of Engineering. He is serving on the Council of the American Physical Society during 1995−8. He was chairman of the Board of Editors of the Journal of Vacuum Science and Technology during 1976−82 and is currently a member of the editorial boards of Journal of Materials Research, Critical Reviews of Solid-State and Materials Sciences, Surface Science Reports, the Chemistry and Physics of Surfaces and Interfaces, and the Encyclopedia of Applied Physics. He served on the Governing Board of the American Institute of Physics from 1976 to 1987, being a member of the Board’s Executive Committee, Corporate Associates Committee, Educational Policy Committee, Journals Committee, and Committee on Public Education and Information. He has written over 350 papers on surface science, materials research, semiconductor physics, and the electronic structure of molecular solids, as well as a monograph on electron tunneling in solids. He is the editor of Surface Science: The First Thirty Years. 1237 Chem. Rev. 1996, 96, 1237−1259

Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds.

Epitaxial thin films of cobalt ranging from 1 ML up to 10 ML have been grown on a Cu(100) substrate and characterized by LEED. The cobalt is found to grow, adopting a slight tetragonal distortion of its high-temperature FCC phase. Further growth of 5 ML Cu on top of a 5 ML Co film results in an almost perfect Cu(100) surface.

http://iopscience.iop.org/article/10.1088/0953-8984/5/14/005/pdf

Epitaxial growth of cobalt films on Cu(100): a crystallographic LEED determination

The crystallography of the GaAs(100)-cs8 3 2d-Ga surface, prepared by simultaneous cycles of Ar ion bombardment and annealing at 825 K, has been determined by a low energy electron diffraction I-V analysis. A model consisting of three adjacent dimers and a dimer vacancy yielded the best fit. The main feature of the corresponding structure is the presence of two different types of Ga dimers at the surface. The dimer in the middle is fully dimerized (dGa-Ga ­ 2.13 A), while the dimerization for the Ga atoms in both outer dimers is much more subtle (dGa-Ga ­ 3.45 A).

Structure of GaAs(100)-c(8 x 2)-Ga.

Using a simple theoretical model we have simulated the conditions under which a scanning tunneling microscope is able to transport a physisorbed xenon atom sitting on a nickel (110) surface. Simple calculations of the tunnel current for the atomic geometries derived using the former model are in good agreement with an elegant experiment performed by Eigler and Schweizer on the same system [Nature 344, 524 (1990)]. On these theoretical grounds, we discuss in detail how different conditions affect the transport process for this system.

J R Cerda

Papers

Epitaxial growth of cobalt films on Cu(100): a crystallographic LEED determination

Structure of GaAs(100)-c(8 x 2)-Ga.

Transport of physisorbed Xe atoms on Ni(110) using a scanning tunneling microscope: A theoretical approach.

Detecting stacking faults during epitaxial growth by low energy electron diffraction

A LEED study of c(2 × 2) Cu and Ag/Mo(100)