This review provides numerical and graphical information about many (but by no means all) of the physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material. The emphasis is on properties of GaAs itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage. The geometry of the sphalerite lattice and of the first Brillouin zone of reciprocal space are used to pave the way for material concerning elastic moduli, speeds of sound, and phonon dispersion curves. A section on thermal properties includes material on the phase diagram and liquidus curve, thermal expansion coefficient as a function of temperature, specific heat and equivalent Debye temperature behavior, and thermal conduction. The discussion of optical properties focusses on dispersion of the dielectric constant from low frequencies [κ0(300)=12.85] through the reststrahlen range to the intrinsic edge, and on the ass...

Semiconducting and other major properties of gallium arsenide

Three different values (3.1, 3.2, and 3.3 eV) have been reported for the optical band gap of zinc oxide single crystals at room temperature. By comparing the optical properties of ZnO crystals using a variety of optical techniques it is concluded that the room temperature band gap is 3.3 eV and that the other values are attributable to a valence band-donor transition at ∼3.15 eV that can dominate the optical absorption when the bulk of a single crystal is probed.

On the optical band gap of zinc oxide

Non-equilibrium Green function theory is formulated to meet the three main challenges of high bias quantum device modeling: self-consistent charging, incoherent and inelastic scattering, and band structure. The theory is written in a general localized orbital basis using the example of the zinc blende lattice. A Dyson equation treatment of the open system boundaries results in a tunneling formula with a generalized Fisher-Lee form for the transmission coefficient that treats injection from emitter continuum states and emitter quasi-bound states on an equal footing. Scattering is then included. Self-energies which include the effects of polar optical phonons, acoustic phonons, alloy fluctuations, interface roughness, and ionized dopants are derived. Interface roughness is modeled as a layer of alloy in which the cations of a given type cluster into islands. Two different treatments of scattering; self-consistent Born and multiple sequential scattering are formulated, described, and analyzed for numerical t...

Single and multiband modeling of quantum electron transport through layered semiconductor devices

A simple one-flux scattering theory of the silicon MOSFET is introduced. Current-voltage (I-V) characteristics are expressed in terms of scattering parameters rather than a mobility. For long-channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devices in which the channel length is comparable to or even shorter than the mean-free-path. The results indicate that for very short channels the transconductance is limited by carrier injection from the source. The theory also indicates that evaluation of the drain current in short-channel MOSFETs is a near-equilibrium transport problem, even though the channel electric field is large in magnitude and varies rapidly in space.

Elementary scattering theory of the Si MOSFET

In this paper an attempt is made to establish the nature of free charge carriers and of charge carriers bound to centres in p-type NiO, CoO and MnO and in n-type MnO and α-Fe2O3. For free charge carriers, d.c. conductivity, Seebeck coefficient and Hall effect are considered. Effects arising from inhomogeneous conduction and impurity conduction are discussed. Impurity conduction appears to have a strong influence on transport properties in the case of α-Fe2O3, less so in NiO, whereas no influence of this effect has been found in CoO and MnO. It is shown that NiO and CoO do not exhibit the features characteristic of small-polaron conductors but rather can be consistently conceived of as large-polaron band semiconductors. It is suggested that magnetic resistance due to exchange coupling between charge-carrier spin and cation spins plays an important role. The anomalous behaviour of the Hall effect in NiO and α-Fe2O3 is extensively discussed. In contradistinction to NiO, CoO and n-type MnO, free char...

J. S. Blakemore

Papers

Semiconductor Statistics