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Surface analysis: x-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary ion mass spectrometry

1 – The Measurement of Tracer Diffusion Coefficients in Solids*

This article reviews the current status of the employment of the isotope effect in solids. Diffusion, self-diffusion processes with different isotopes in pure materials and heterostructures (quantum wells), neutron transmutation doping of different semiconducting crystals, optical fiber as well as use isotope-mixed crystals (C, LiH) as the generator of the coherent radiation in the ultraviolet range of the spectrum are the main modern applications of isotope science and engineering. There are briefly discussed the other future applications including modern personal computer, isotope-based quantum computer as well as information storage. We hope to give sufficient references to published work so that the interested reader can easily find the primary literature sources to this rapidly expanding field of solid state physics.

Applications of isotope effects in solids

SIMS analysis of epilayers

Characterization of nickel complexes on oxide supports by secondary ion mass spectrometry

The technique of Secondary Ion Mass Spectrometry (SIMS) is analyzed for its capabilities of monitoring layered structures. Primary ion beam current and secondary ion species are varied in order to minimize interface phenomena due to changes in ionization efficiences. It is noted that the choice of primary ion beam current can be particularly important when an oxygen bleed is used. Layer profiles are shown to become more complex when a secondary cluster ion is monitored instead of the monoatomic ion for species detection. With nitrogen as an example, quantitative analysis using cluster ions containing three or more atoms is shown to be extremely difficult, particularly when no oxygen bleed is used.

J. S. Slattery

Papers

Secondary ion mass spectrometry analysis of semiconductor layers