All-optical label swapping is a promising approach to ultra-high packet-rate routing and forwarding directly in the optical layer. In this paper, we review results of the DARPA Next Generation Internet program in all-optical label swapping at University of California at Santa Barbara (UCSB). We describe the overall network approach to encapsulate packets with optical labels and process forwarding and routing functions independent of packer bit rate and format. Various approaches to label coding using serial and subcarrier multiplexing addressing and the associated techniques for label erasure and rewriting, packet regeneration and packet-rate wavelength conversion are reviewed. These functions have been implemented using both fiber and semiconductor-based technologies and the ongoing effort at UCSB to integrate these functions is reported. We described experimental results for various components and label swapping functions and demonstration of 40 Gb/s optical label swapping. The advantages and disadvantages of using the various coding techniques and implementation technologies are discussed.

All-optical label swapping networks and technologies

The main bandwidth bottleneck in today's networks is in the access segment. To address that bottleneck, broadband fiber access technologies such as passive optical networks (PONs) are an indispensable solution. The industry has selected time-division multiplexing (TDM) for current PON deployments. To satisfy future bandwidth demands, however, next-generation PON systems are being investigated to provide even higher performance. In this paper, we first review current TDM-PONs; we designate them as generation C. Next, we review next-generation PON systems, which we categorize into C+1 and C+2 generations. We expect C+1 systems to provide economic near-term bandwidth upgrade by overlaying new services on current TDM-PONs. For the long term, C+2 systems will provide more dramatic system improvement using wavelength division multiplexing technologies. Some C+2 architectures require new infrastructures and/or equipment, whereas others employ a more evolutionary approach. We also review key enabling components and technologies for C+1 and C+2 generations and point out important topics for future research.

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Next-Generation Optical Access Networks

Tunable semiconductor lasers have been listed in numerous critical technology lists for future optical communication and sensing systems. This paper summarizes a tutorial that was given at OFC '03. It includes some discussion of why tunable lasers might be beneficial, an outline of basic tuning mechanisms, some examples of tunable lasers that have been commercialized, and a discussion of control techniques. More extensive data is given for the widely-tunable sampled-grating distributed-Bragg-reflector (SGDBR) type of laser, including data for such lasers integrated monolithically with modulators to form complete transmitter front ends. A summary of reliability data for the SGDBR laser is also given. It is concluded that tunable lasers can reduce operational costs, that full-band tunability is desirable for many applications, that monolithic integration offers the most potential for reducing size, weight, power and cost, and that sufficient reliability for system insertion has been demonstrated.

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Tunable semiconductor lasers: a tutorial

After over two decades of exploration, tunable diode lasers are beginning to find significant applications, driven largely by the huge demand for bandwidth that is guiding many developments in the optical fiber communication business today. In the paper, some of the history and key developments that have led to the technologies available today are reviewed from the perspective of the author. After discussion of some of the early work, the focus shifts to widely tunable diode lasers, which would appear to be key enablers for future dense wavelength-division multiplexing and optical switching and networking systems. The distinguishing characteristics of the current technological alternatives are summarized.

Monolithic tunable diode lasers

Vertical-cavity surface-emitting lasers (VCSELs) are now key optical sources in optical communications. Their main application is currently in local area networks using multimode optical fibers. VCSELs are also being rapidly commercialized for single-mode fiber metropolitan area and wide area network applications. The advantages of VCSEL include simpler fiber coupling, easier packaging and testing, and the ability to be fabricated in arrays. In addition, VCSELs have an inherent single-wavelength structure that is well suited for wavelength engineering. All these advantages promise to lead to cost-effective wavelength-tunable lasers, which are essential for the future intelligent, all-optical networks. The author reviews the advances on wavelength-tunable VCSELs. She summarizes some of the early breakthroughs in wavelength engineering of VCSELs and then concentrates on the designs and properties of micromechanical tunable VCSEL.

Tunable VCSEL

A vertical-grating-assisted codirectional coupler laser with rear sampled grating reflector (GCSR laser) combines single-mode operation over a very wide tuning range of 74 nm with a side-mode suppression of better than 30 dB over most of the wavelength span. The total tuning span is limited by the combined bandwidths of the active material gain curve and the envelope of the sampled grating reflection peak spectrum, while the tuning capacity of the directional coupler filter alone is estimated to be at least 140 nm. >

74 nm wavelength tuning range of an InGaAsP/InP vertical grating assisted codirectional coupler laser with rear sampled grating reflector

We report on a 1.5-/spl mu/m vertical-cavity laser that utilizes one GaInAsP-InP and one Si-SiO/sub 2/ mirror in combination with a strain-compensated GaInAsP quantum-well active layer. Pulsed lasing operation was achieved in a temperature range from -160 to +43/spl deg/C. The lasers exhibit 30-mA pulsed threshold current at room temperature. CW operation was obtained up to -25/spl deg/C.

Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector

Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers

We report improved tuning regularity in a vertical grating assisted codirectional coupler laser with a super-structure grating distributed Bragg reflector (GCSR). Access to 20 wavelengths with SMSR better than 20 dB within a tuning range of 100 nn was obtained with a single current control in a GCSR laser. The total tuning behavior shows a potential of complete wavelength coverage over 100 nm by use of three tuning currents. >

J. Wallin

Papers

74 nm wavelength tuning range of an InGaAsP/InP vertical grating assisted codirectional coupler laser with rear sampled grating reflector

Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector

Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers

Access to 20 evenly distributed wavelengths over 100 nm using only a single current tuning in a four-electrode monolithic semiconductor laser

Selective Area Regrowth of Butt-joint Coupled Waveguides in Multi-section DBR Lasers