J
J. Walter Schultze
Researcher at University of Düsseldorf
Publications - 5
Citations - 47
J. Walter Schultze is an academic researcher from University of Düsseldorf. The author has contributed to research in topics: ISFET & Etching (microfabrication). The author has an hindex of 3, co-authored 5 publications receiving 45 citations.
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BookDOI
Electrochemical microsystem technologies
TL;DR: In this paper, the authors present an approach to design Silicon-based field effect sensors for measuring cell volume, Membrane potential, and Intracellular Ion Concentrations in Invertebrate Nerve Cells and Lipid Vesicles On Silicon Chips.
Journal ArticleDOI
Sensitivity variation of the electrochemical quartz crystal microbalance in response to energy trapping
TL;DR: In this paper, a model based on the Rayleigh principle of energy balance and energy trapping was proposed to describe the observed deviations of the electrochemical quartz crystal microbalance (EQCM) to deposited mass.
Proceedings ArticleDOI
Field-effect-based multifunctional hybrid sensor module for the determination of both (bio-)chemical and physical parameters
TL;DR: In this article, an ion-sensitive field effect transistor (ISFET) was used as transducer for the detection of both (bio-)chemical and physical parameters.
Proceedings ArticleDOI
Nanolithography of positive and negative structures by scanning probe microscopy using force modulation
TL;DR: In this paper, the tip of the scanning probe microscope is scanned in direct contact to the resist surface under a defined load force, and the main advantage of the presented technique is the fabrication of oblique structures in one step which cannot be done by any other lithography technique.
Proceedings ArticleDOI
Investigations on porous silicon layers with regard to chemical microsensor applications
Michael J. Schoening,M. Crott,F. Ronkel,Marion Thust,J. Walter Schultze,Peter Kordos,Hans Lüth +6 more
TL;DR: In this article, a new concept for silicon microsensors based on porous EIS lectrolyte-nsulator4emiconductor (EIS-N4E) structures is presented.