Showing papers by "Jack T. Kavalieros published in 2001"
Patent•
29 Jun 2001TL;DR: In this paper, a gate dielectric is formed on the first surface of the intrinsic silicon body, and a gate electrode comprises a mid-gap work function film on the gate.
Abstract: A novel transistor structure and its method of fabrication. According to the present invention, the transistor includes an intrinsic silicon body having a first surface. A gate dielectric is formed on the first surface of the intrinsic silicon body. A gate electrode is formed on the gate dielectric wherein the gate electrode comprises a mid-gap work function film on the gate dielectric. A pair of source/drain regions are formed on opposite sides of the intrinsic silicon body.
71 citations
Patent•
29 Jun 2001TL;DR: In this article, a gate dielectric is formed on the first surface of the intrinsic silicon body, and a gate electrode comprises a mid-gap work function film on the gate.
Abstract: A novel transistor structure and its method of fabrication. According to the present invention, the transistor includes an intrinsic silicon body having a first surface. A gate dielectric is formed on the first surface of t,he intrinsic silicon body. A gate electrode is formed on the gate dielectric wherein the gate electrode comprises a mid-gap work function film on the gate dielectric. A pair of source/drain regions are formed on opposite sides of the intrinsic silicon body.
20 citations