Preparation and physical properties of transparent conducting oxide films

A review of recent and current work on microwave FET's and amplifiers is presented, and an extensive bibliography of recent articles is appended (250 references). First, the various FET structures (MRSFET's, JFET's, and IGFET's) and their performances are reviewed. Second, the principle of operation is outlined for Si- and GaAs-MESFET's; the basic device physics, equivalent circuit, high-frequency limitations, and noise behavior are treated. Third, the design principles and performance of microwave MESFET amplifiers are summarized.

Microwave Field-Effect Transistors--1976

Models for the oxidation of silicon

Fluorine was impregnated at the Si-SiO2 interface by implanting fluorine ions (19F+) into silicon at low energy (20 keV) to a dose in the range 1011–1015 ions/cm2. Studies were carried out for two cases: first, silicon was oxidised in dry oxygen after 19F+ implantation and second, silicon was implanted with 19F+ after its oxidation to a 207 A thick dry thermal oxide. In both the cases, high frequency capacitance-voltage (HF C-V) measurements show reduction in the midgap interface state density (Nss) nearly by one order of magnitude. Another important observation was that the incorporation of fluorine reduces the oxidation rate of silicon without deteriorating the interface properties.

Properties of the fluorine-implanted Si-SiO2 system

A new model is proposed to interpret the breakdown phenomenon of dielectric thin films such as SiO2 films over the whole range of an applied field. It is suggested that two main mechanisms are responsible for the dielectric breakdown which is influenced by the geomorphic and physical parameters, and the examination conditions. One of the mechanisms is the avalanche breakdown, the so‐called intrinsic type, which is caused by impact ionization. The other, the extrinsic type, is the filament‐heating transport which induces a destructive breakdown. A simple mathematical model invoking the role of photon absorption is constructed to describe the effects of the band gap and the insulator thickness on the dielectric breakdown. It can be deduced from the model that (i) the mean distance of impact ionization is equivalent to the minimum thickness of the film generating the impact ionization and (ii) the probability of impact ionization is a function of the width of the band gap of the insulator under an applied fi...

Jacques Beaudouin

Papers

Some Effects of “Trichloroethylene Oxidation” on the Characteristics of MOS Devices