A vehicle imaging system includes an imaging sensor, an imaging sensor bracket and an image processor. A vehicle mounting portion of the bracket is configured to mount at a mounting element for a license plate of the vehicle, and a sensor mounting portion of the bracket is angled with respect to the vehicle mounting portion such that the sensor mounting portion extends generally rearwardly when the bracket is fastened at the license plate mounting element. The imaging sensor generates a signal indicative of an image representative of a scene occurring within the field of view. The image processor receives the signal and processes the signal and generates an output signal representative of the imaged scene. The system may include a display, which may display at least one iconistic representation of at least one detected relevant object in response to an output signal generated by the image processor.

Vehicle imaging system

Acoustic waves are used to transfer small amounts of fluid in a non-contact manner. Acoustic waves are propagated through a pool of a source fluid in such a manner that causes the ejection of a single micro-droplet from the surface of the pool. The droplet is ejected towards a target with sufficient force to provide for contact of the droplet with the target. Because the fluid is not contacted by any fluid transfer device such as a pipette, the opportunities for contamination are minimized. Methods may be employed to transfer fluids from an array of source sites to an array of target sites, thereby enabling the precise automation of a wide variety of procedures including screening and synthesis procedures commonly used in biotechnology.

Acoustically mediated fluid transfer methods and uses thereof

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

CMOS compatible BioFET

In general, in one aspect, the invention features a method for driving a droplet ejection device having an actuator, including applying a multipulse waveform that includes two or more drive pulses to the actuator to cause the droplet ejection device to eject a single droplet of a fluid, wherein a frequency of the drive pulses is greater than a natural frequency, fj, of the droplet ejection device.

High frequency droplet ejection device and method

A vehicle-based video processor module for a video system of a vehicle includes a video processor circuit, a plurality of electronic sensor interfaces that are operable to receive image output data from a plurality of imaging devices and at least one electronic vehicle interface that is operable to communicate with a vehicle communication bus. The video processor circuit is operable to process the image output data from the plurality of imaging devices in a single database in a standard format and enhances the image output data.

Vehicular video system

A semiconductor circuit integrated with CMOS circuits for receiving a TTL input voltage and generating a large negative and positive voltage swing with respect to p-type or n-type substrate is disclosed. This invention is based on elimination of the electro-static discharge (ESD) protection circuit which is a requirement for any integrated circuit. Eliminating the ESD protection circuit also eliminates the clamping feature of the ESD protection circuit and therefore the circuit can be driven to negative voltages for PMOS circuits and to positive voltages for NMOS circuits. This provides the possibility of connecting the drain of a a P-channel type metal oxide silicon field effect (PMOS) transistor, which is fabricated on a p-type substrate within an n-well, to a voltage below the the substrate voltage. Also, in a n-channel type metal oxide silicon field effect (NMOS) transistor which is fabricated on a n-type substrate within a P-well, the drain can be connected to voltages higher than the substrate voltage. Utilizing this feature of a MOS transistor provides a way to design an integrated circuit which can handle negative voltage swings as well as positive voltage swings.

An integrated device having MOS transistors which enable positive and negative voltage swings

An acoustic inkjet printhead utilizes a pulse width modulation to control droplet size or ejection velocity An individual control pulse controls the duration and the time a RF signal is applied to each transducer To modify the RF signal of each transducer, the pulse width of each control signal can be modified according to a predetermined correction data The rising edge of the control data is delayed according to the correction data while the falling edge is kept the same

Pulse width modulation for correcting non-uniformity of acoustic inkjet printhead

An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch.

An integrated rf switching cell built in cmos technology and utilizing a high voltage integrated circuit diode with a charge injecting node

An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

High voltage integrated circuit diode with a charge injecting node

PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated RF switching cell having a CMOS circuit. SOLUTION: This CMOS integrated RF switch has the following: an RF signal input node, a logical input node, a diode 24 provided with an anode, a cathode, and a charge injection node, a charge injection node driver 60 provided with an input and an output which are capable of driving from a negative voltage to at least a zero volt signal, a similar high-voltage level translater 64, a similar high-voltage driver 62, and an RC filter connected between a high- voltage driver output and an RF signal input.

Jaime Lerma

Papers

An integrated device having MOS transistors which enable positive and negative voltage swings

Pulse width modulation for correcting non-uniformity of acoustic inkjet printhead

An integrated rf switching cell built in cmos technology and utilizing a high voltage integrated circuit diode with a charge injecting node

High voltage integrated circuit diode with a charge injecting node

Cmos-integrated rf switch