An orthopedic device for implanting between adjacent vertebrae comprising: an arcuate balloon and a hardenable material within said balloon. In some embodiments, the balloon has a footprint that substantially corresponds to a perimeter of a vertebral endplate. An inflatable device is inserted through a cannula into an intervertebral space and oriented so that, upon expansion, a natural angle between vertebrae will be at least partially restored. At least one component selected from the group consisting of a load-bearing component and an osteobiologic component is directed into the inflatable device through a fluid communication means.

In-situ formed intervertebral fusion device and method

Spinal tissue distraction devices that include a member which has a pre-deployed configuration for insertion between tissue layers and a deployed configuration in which the member, by change of configuration, forms a support structure for separating and supporting layers of spinal tissue.

Spinal tissue distraction devices

Method and apparatus are disclosed for distracting tissue and particularly spinal tissue. The device and method may include insertion of at least one elongated member and an augmenting member to form a structure between the tissues to be distraction, such that a dimensional aspect of the structure is augmented upon movement of the augmenting structure.

Devices For Treating The Spine

Methods of separating and/or supporting layers of tissue in the human spine. Such methods generally comprise inserting at least a distal end portion of a guide member between layers of tissue in the human spine wherein the distal end portion defines a predetermined shape. A distraction device is advanced over at least the distal end portion of the guide member so that the distraction device substantially assumes the predetermined shape of the distal end portion of the guide member to form a support structure between the tissue layers that separates and/or supports the tissue layers.

Methods of distracting tissue layers of the human spine

A multi-phase 1 GHz charge pump in 32 nm logic process demonstrates a compact area (159 × 42 ?m2) for boosting supply voltage from twice the threshold voltage (2 Vth) to 3-4 Vth. Self contained clocking with metal-finger flying capacitors enable embedding voltage boost functionality in close proximity to digital logic for supplying low current Vmin requirement of state elements in logic blocks. Multi-phase operation with phase separation of the order of buffer delays avoids the need for a large storage reservoir capacitor. Special configuration of the pump stages to work in parallel enables a fast (5 ns) output transition from disable to enable state. The multi-phase pump operated as a 1 V to 2 V doubler with >5 mA output capability addresses the need for a gated power delivery solution for logic blocks having state-preservation Vmin requirements.

Multi-Phase 1 GHz Voltage Doubler Charge Pump in 32 nm Logic Process

PROBLEM TO BE SOLVED: To provide a charge pump circuit preventing influence of body effect SOLUTION: A plurality of driving elements are connected to each other in a cascaded form Each driving element comprises an input terminal, an output terminal, a first node, a second node, a first capacitor connected to the first node, a second capacitor connected to the output terminal, a first transistor, a second transistor, and a third transistor The first transistor is provided with a substrate connected to the second node, a gate connected to the output terminal, a drain connected to the input terminal, and a source connected to the first node The second transistor is provided with a substrate connected to the second node, a gate connected to the first node, a drain connected to the input terminal, and a source connected to the output terminal The third transistor is provided with a substrate connected to the second node, a gate connected to the first node, a source connected to the second node, and a drain connected to the output terminal COPYRIGHT: (C)2003,JPO

Charge pump circuit

A four-phase dual pumping circuit has a number of stages according to the required output voltage based on an input voltage. Each stage has a first pumping unit and a second pumping unit that are mirror and identical to each other and electrically coupled to each other. The dual pumping circuit is controlled by four-phase clocks which are made from one pair of out of phase clocks. The transistors of the dual pumping circuit have special substrate connection to minimize body effects. The four-phase dual pumping circuit uses NMOSFETS for negative pumping and PMOSFETS for positive pumping.

Four-phase dual pumping circuit

A charge pump circuit has input and output nodes, a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. A drain of the first transistor and a drain of the second transistor are connected to the input node. A source of the second transistor and a drain of the third transistor are connected to the output node. The first capacitor is connected to a gate of the second transistor. The third transistor is connected to a substrate and a source of the second transistor. When the first transistor is turned on, a voltage at the input node will charge the first capacitor. When the second transistor is turned on, the third transistor is turned on simultaneously so that the substrate and the source of the second transistor will reach the same voltage level. Then, voltage at the input node will charge the second capacitor.

Charge pump circuit without body effects

A new four-phase charge pumping circuit for low supply voltages using 06 /spl mu/m triple-well CMOS technology to generate high negative boosted voltages is presented With the new substrate connected technique, the influence of threshold voltage (-094 V) is minimized and the body effect is almost eliminated A five-stage charge pump can efficiently pump lower than -7 V at supply voltage of 18 V with 100 /spl mu/A loading current

Jain-Hao Lu

Papers

Charge pump circuit

Four-phase dual pumping circuit

Charge pump circuit without body effects

A new 4-phase charge pump without body effects for low supply voltages