Architecture of monophase InSe thin film structures for solar cell applications

Indium selenide (InSe) thin films were prepared by electron beam evaporation technique onto glass substrate at a pressure of ~8×10 -5 Pa. The deposition rate of the InSe thin films is ~8.30 nms -1 . The XRD and SEM study reveal that InSe thin films are amorphous before phase-transition while they become polycrystalline after phase-transition. The Energy Dispersive Analysis of X-ray (EDAX) analysis shows that InSe thin films are nonstoichiometric. The change in electrical conductivity of InSe thin films with temperature shows a semiconducting behavior. The optical properties of both the virgin and phasetransited InSe thin films have been studied in the wavelength range 360< λ<1100nm, respectively at room temperature. The study of absorption coefficient of virgin InSe thin films shows a direct type transition with a band gap of ≈1.65 eV which agrees well with the reported values. The variations of refractive index and dielectric constant of the films were also calculated and discussed in relation with film re-crystallization after heat treatment. The integrated values of luminous and solar transmittance as well as of reflectance suggest that InSe is a potential candidate for the application in selective surface devices.

Optical Properties of E-beam Evaporated Indium Selenide (InSe) Thin Films

Linear and nonlinear optical studies of indium selenide thin films prepared by thermal evaporation technique

Effect of reaction time and different solvents ratios on the formed phases and optical properties of formamidinium lead bromide

Indium monoselenide (InSe) which is a layered semiconductor whose energy gap is 1.24 eV has received attention because of its potential applications in optoelectronic devices. In the present work n-type InSe crystals were grown by a special modification of the vertical Bridgman technique. X-ray Diffraction (XRD) patterns showed that all samples were single phased InSe. The crystals were irradiated with 100 - 500 KGy to reveal the influence of irradiation on the structural properties of the samples. Detailed structural analysis was done by Scherrerr’s procedures, x-ray peak broadening and Williamson–Hall plot methods to evaluate the crystalline sizes and lattice strain. Also from the relations between the irradiation dose and the deformation of the lattice parameters we could investigate and discuss the mutation of the dislocation density, grain size, microstrain and crystallinity of the grown crystals. Striking results are found due to irradiation in the present study for the first time.

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Influence of γ-Irradiation on the Structural Properties of Indium Monoselenide Crystals

CIS (Cu-InSe) thin films were prepared onto glass substrate by the two stage process—generally called bilayer process. At first, Cu layer was deposited onto glass substrate by electron beam evaporation technique and then InSe single layer was deposited on the resulting Cu layer to produce CIS thin film. XRD (X-ray diffraction) analysis revealed that deposited film has an amorphous nature. Electrical resistivity measurements were carried out as a function of temperature during heating and cooling cycles in air. The heating and cooling cycles of the sample are almost reversible after successive heat-treatment in air. In order to consider the influence of the InSe upper layer on the optical properties, the thickness of the InSe upper layer in the CIS films was varied from 50 to 150 nm. Analysis of the transmittance and reflectance spectra, recorded in the wavelength range of 400-1,100 nm, revealed that the CIS films have high absorption coefficient of ~10 cm. The direct band gap varies from 1.40 to 1.22 eV. The refractive index, the extinction coefficient and the dielectric constant of the CIS films depend on the film thickness.

Jaker

Papers

Preparation and Characterization of Electron-Beam Evaporated Cu-lnSe Thin Films Using Two Stage Processes

Preparation and Properties of Indium Selenide （InSe） Thin Films for Selective Surface Applications