The present invention is an environmental barrier for an OLED. The environmental barrier has a foundation and a cover. Both the foundation and the cover have a top of three layers of (a) a first polymer layer, (b) a ceramic layer, and (c) a second polymer layer. The foundation and/or the cover may have a at least one set of intermediate barrier each having (a) an intermediate polymer layer with (b) an intermediate ceramic layer thereon. In a preferred embodiment, the foundation has a substrate upon which at least a top is deposited. An OLED is constructed upon the top, opposite the substrate. The cover of at least a top then placed over the OLED. The placement may be by gluing or preferably by vacuum deposition. For use as a display, it is preferred that either the ceramic layer(s) in the foundation, cover or both is substantially transparent to the light emitted by the OLED. Each layer of the foundation and the cover is preferably vacuum deposited. Vacuum deposition includes monolayer spreading under vacuum, plasma deposition, flash evaporation and combinations thereof. It is further preferred that all layers are deposited and cured between rolls or rollers to avoid the defects that may be caused by abrasion over a roll or roller.

Environmental barrier material for organic light emitting device and method of making

An edge-sealed barrier film composite The composite includes a substrate and at least one initial barrier stack adjacent to the substrate The at least one initial barrier stack includes at least one decoupling layer and at least one barrier layer One of the barrier layers has an area greater than the area of one of the decoupling layers The decoupling layer is sealed by the first barrier layer within the area of barrier material An edge-sealed, encapsulated environmentally sensitive device is provided A method of making the edge-sealed barrier film composite is also provided

Method for edge sealing barrier films

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Chamber for constructing a film on a semiconductor wafer

An apparatus for chemical vapor deposition includes a dispenser for dispensing a precursor to a vaporizer positioned within a vaporization chamber. A delivery conduit joins the vaporization with a process chamber. A flow meter is positioned within the delivery conduit for measuring the flow of precursor through the delivery conduit. A flow controller is likewise positioned within the delivery conduit for controlling the flow of precursor in response to the measured flow rate.

Film processing system

A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporzation matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may sutiably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO 3 , Ba x Sr 1-x Nb 2 O 6 , and PbZr 1-x Ti x O 3 .

Apparatus for flash vaporization delivery of reagents

A vaporizing apparatus delivers precisely controlled, substantially continuous and monitored vapor flows for uses such as in plasma enhanced vapor deposition The vaporizing apparatus includes a fluid passageway along which are a pumping device, a vaporizing device, and a flowing device, all in fluid communication with the passageway The vaporizing device vaporizes liquid pumped from the pumping device and includes a heat sink layer, a heated layer, and a portion of the passageway sandwiched therebetween The vaporizing apparatus can sustain a flow of organosilicon vapor at a flow rate of about 1 to about 100 SCCM for as long as desired

James J. Hofman

Papers

Controlled flow vaporizer