System and method for wireless power transfer based on values set to comply with limits from multiple different agencies.

Biological effects of magnetic power transfer

A chemical vapor deposition reactor (59) including a wafer (60) boat (77) with a vertical stack of horizontally oriented susceptors (62) serving as thermal plates (76) and each having pins (228) extending upward for suspending a wafer (60) between a pair of susceptors (62). Reactant gas injector (65) and exhaust apparatus (272) are positioned to concentrate a forceful supply of reactant gas across each wafer (60) at a speed in excess of 10 cm/sec. The pressure is held in the range of 0.1 to 5,000 mTorr. The forceful gas flow avoids gas depletion effects, thinning the boundary layer and resulting in faster delivery of reactants to substrate surfaces, resulting in surface rate reaction limited operation. A plurality of individually controllable heaters (78) are spaced vertically around the sides of the boat (77). Temperature sensors (130) monitor the temperature along the boat (77) height and provide input to a controller (118) for adjusting the heater drive to optimize the temperature uniformity.

High rate deposition at low pressures in a small batch reactor

A method of increasing ALP briefly, a preferred embodiment of the present invention includes a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer by layer growth on a wafer. A first reactant is introduced with a percentage of a carrier gas. After a first time interval, the first reactant flow is reduced while the carrier gas flow is increased so as to maintain an approximately constant total gas flow. When the first reactant flow reaches a minimal, predetermined amount, a second reactant flow is initiated and increased while the carrier gas flow is decreased so as to continue a constant total gas flow. The method alternatively includes introducing a substance that enhances reactant adsorption and chemisorption, either as a first applied gas that reacts with the surface or as an added ligand to the reactant. Still further alternatives include a periodic rapid thermo anneal for improving film properties, parallel wafer processing and a reactant reservoir.

Method and apparatus for layer by layer deposition of thin films

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.

Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density

A first pattern of bumps and a second pattern of bumps are formed on a substrate (10) with bumps (14,15). During a transfer process, only the bumps (14) of the first pattern of bumps are transferred to pad extensions (20) of a device (17). The bumps (15) of the second pattern of bumps are not affected by this process and can be later transferred to a second device.

Substrate for transferring bumps and method of use

Apparatus for the nitridiation of a silicon-bearing substrate is disclosed. The apparatus includes a double walled reaction vessel having first and second concentric walls bounding a reaction volume. Temperature of the reaction volume is controlled by resistance heaters located outside the outermost of the two concentric tubes. Plasma electrodes are positioned about the reaction volume and between the two concentric tubes. The ambient between the two tubes is controlled to protect the electrodes from oxidation at the high temperatures to which they are exposed. An rf generator is coupled to the plasma electrodes and is controllable independently from the resistance heaters.

Plasma enhanced thermal treatment apparatus

A static MOS RAM cell is provided that is resistant to inadvertent change of state due to charged particles striking the cell without decreasing write time. First and second cross-coupled transistors are coupled between first and second nodes, respectively, and a first voltage. First and second loads are coupled between the first and second nodes, respectively, and a second voltage. A first coupling transistor is coupled between the first node and a first input terminal, and has a gate coupled for receiving a write signal. A second coupling transistor is coupled between the second node and a second input terminal, and has a gate coupled for receiving the write signal. First and second variable loads are coupled between the first node and a gate of the second latching transistor, and the second node and a gate of the first latching transistor, respectively, for providing a resistance in the standby mode and relatively no resistance in the write mode.

Random access memory cell resistant to inadvertant change of state due to charged particles

Disclosed is a Schottky barrier or hot carrier diode and process for making same wherein a diffused PN junction and a Schottky barrier junction are both formed in a body of semiconductor material. The diffused PN junction is formed by first diffusing an impurity through an opening in a diffusion mask and into one surface of the semiconductor body to form PN junction. Next, a large central portion of the region formed by the above diffusion is removed by etching or cutting, leaving unaffected by the etchant only that portion of the diffused region underlying and adjacent to the diffusion mask on the surface of the semiconductor body. The latter portion of the diffused region forms a relatively small area diffused PN junction. Finally, a Schottky barrier junction is formed in the etched out area of the semiconductor body, and the diode including the diffused and Schottky barrier junctions has a near-ideal current-voltage characteristic and still maintains its fast recovery time.

A hot carrier pn-diode

A self aligning method of manufacture of MOS devices or integrated circuits includes the step of providing a doped glassy layer on the surface of a relatively high resistivity starting semiconductor body The doping in the glassy layer is of the opposite conductivity type from that of the source and drain to be formed to define the MOS device For example, for making Nchannel devices, a P-type dopant such as boron would be part of the glass, while if P-channel devices were being made, a N dopant such as phosphorous would be utilized The glassy layer is then etched to open windows for the source and drain diffusion and the surface of the starting wafer is diffused from the glassy layer during the diffusion of the source and drain

James L. Rutledge

Papers

Substrate for transferring bumps and method of use

Plasma enhanced thermal treatment apparatus

Random access memory cell resistant to inadvertant change of state due to charged particles

A hot carrier pn-diode

Manufacture of semiconductor devices