James S. Papanu

TL;DR: In this paper, a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection device having a gas supply containing an etchant species in a gas, an opening in the chamber housing.

TL;DR: In this paper, an apparatus and a process for plasma cleaning the interior surfaces of semiconductor processing chambers is presented, which is directed to dry etching of accumulated contaminant residues attached to the inner surfaces of the plasma processing chamber and includes introducing a cleaning gas mixture of a halogen-containing gas; activating a plasma in an environment substantially free of oxygen species; contacting the contaminant residue with the activated cleaning gas to volatilize the residues; and removing the gaseous byproducts from the chamber.

TL;DR: In this paper, a substrate cleaning apparatus has a remote source to remotely energize a hydrogencontaining gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogencontaining species, the second ratio being different than the first ratio.

TL;DR: In this paper, a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen containing residue was presented.

TL;DR: In this article, a stripping reactor is presented that includes a remote plasma source disposed to output a gas; a gas distribution plate connected to ground that transmits the gas output from the remote source to a processing chamber; and a wafer support assembly disposed about the wafer pedestal.