http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

Preparing the books to read every day is enjoyable for many people. However, there are still many people who also don't like reading. This is a problem. But, when you can support others to start reading, it will be better. One of the books that can be recommended for new readers is computer aided analysis of electronic circuits algorithms and computational techniques. This book is not kind of difficult book to read. It can be read and understand by the new readers.

Computer-aided analysis of electronic circuits: Algorithms and computational techniques

Preface. Contents of volumes 1-6. 1. Magnetism in ultrathin transition metal films (U. Gradmann). 2. Energy band theory of metallic magnetism in the elements (V.L. Moruzzi, P.M. Marcus). 3. Density functional theory of the ground state magnetic properties of rare earths and actinides (M.S.S. Brooks, B. Johansson). 4. Diluted magnetic semiconductors (J. Kossut, W. Dobrowolski). 5. Magnetic properties of binary rare-earth 3d-transition-metal intermetallic compounds (J.J.M. Franse, R.J. Radwanski). 6. Neutron scattering on heavy fermion and valence fluctuation 4f-systems (M. Loewenhaupt, K.H. Fischer). Author index. Subject index. Materials index.

Handbook of Magnetic Materials

This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current, and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide bandgap semiconductors is also discussed.

/pdf/temperature-measurement-of-power-semiconductor-devices-by-1nz3bww95c.pdf

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

A new evaluation method of thermal transient measurement results

This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromode) of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.

Modelling Power Schottky Diodes

Model transformatora impulsowego dla programu SPICE uwzględniający wpływ temperatury na jego charakterystyki

This paper presents the results of investigations on the influence of thermal phenomena—self-heating in semiconductor devices and mutual thermal couplings between them—on the characteristics of selected electronics networks containing bipolar transistors (BJTs) or insulated gate bipolar transistors (IGBTs). Using the authors’ compact electrothermal models of the transistors mentioned above, the non-isothermal DC and dynamic characteristics of these devices and selected networks with these devices are calculated. Their selected characteristics are compared with the measurement results. The waveforms of currents in the considered networks are also determined taking into account thermal phenomena. Discrepancies between the obtained calculation and measurement results and the calculation results obtained without thermal phenomena are indicated. In particular, attention is paid to cooling conditions at which the networks under consideration may be damaged due to thermal phenomena.

Influence of Thermal Phenomena on the Characteristics of Selected Electronics Networks

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

https://www.mdpi.com/1996-1073/13/1/187/pdf

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

The method for measuring the own thermal resistance of a magnetic device consists in that the winding resistance, whose thermometric characteristics slope describes the temperature coefficient of copper resistivity changes ρ Cu , is measured as a thermally sensitive parameter. The measurement is carried out in at least three stages, including in turn measurements and calculations based on analytical formulae. The measurement of the own thermal resistance of a magnetic device in the form of a choking-coil is carried out in three stages, while the measurement of the own thermal resistance of a magnetic device in the form of a transformer is carried out in five stages. At the first stage of measurement the winding resistance is measured at a low value of the choking-coil current and the core temperature is measured using a radiometric pyrometer. At the second stage measurements are made, in a thermal steady state, of the winding resistance and, with a radiometric pyrometer, the core temperature at a high value of the current. At the third stage the value of the winding thermal resistance and the mutual thermal resistance between the core and the winding are calculated from given formulae. In the case of a transformer, at the fourth stage a sinusoidal signal is applied across the primary winding and the waveforms of the primary winding current and a voltage across a capacitor are measured using an oscilloscope. The core temperature is also measured. At the fifth stage the value of the core thermal resistance is determined based on given formulae. The circuit for measuring own and mutual thermal resistances of a magnetic device comprises voltmeters, ammeters, an oscilloscope, DC voltage sources, double-throw switches, a radiometric pyrometer, a source of sinusoidal signal, resistors and a capacitor.

Janusz Zarębski

Papers

Modelling Power Schottky Diodes

Model transformatora impulsowego dla programu SPICE uwzględniający wpływ temperatury na jego charakterystyki

Influence of Thermal Phenomena on the Characteristics of Selected Electronics Networks

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

The method and circuit for measuring own and mutual thermal resistances of a magnetic device