A Three Dimensional Structure (3DS) Memory (100) allows for physical separation of the memory circuits (103) and the control logic circuit (101) onto different layers (103) such that each layer may be separately optimized. One control logic circuit (101) suffices for several memory circuits (103), reducing cost. Fabrication of 3DS memory (100) involves thinning of the memory circuit (103) to less than 50 microns in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections (105) are used. The 3DS memory (100) manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Three dimensional structure memory

The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.

Vertical system integration

Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission and using said source. Each cathode (5) comprises an electrically conductive layer (22) and micropoints (12) and, according to the invention, a continuous resistive layer (24) is provided between the conductive layer and the micropoints. The display means comprises a cathodoluminescent anode (16) facing the source.

Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source

The invention provides improved devices containing adherent carbon nanotube films, in particular electron field emitter structures containing such films. Previously, attaining even moderate adherence of powdery or mat-like nanotubes to a substrate was difficult, because of the perfect fullerene structure of nanotubes, which tend to exhibit no dangling bonds or defect sites where chemical bonding to the substrate is able to occur. The invention overcomes these problems, and provides a strongly adherent nanotube film, by a variety of fabrication processes.

Device comprising a carbon nanotube field emitter structure and process for forming device

An improved process for fabricating nanotube field emitter structures is provided, in which the nanotubes protrude from a supporting base material to improve emission properties. The resulting emitter structure are useful in a variety of devices, including microwave vacuum tube devices and flat-panel, field-emission displays. To attain the protruding nanotube emitter structure, according to one embodiment of the invention, nanotubes and metal particles are mixed and consolidated into a compact, and the compact is then sectioned to expose a substantial number of nanotube ends. A layer of the metal is selectively etched from the sectioned surface, leaving the exposed nanotubes protruding from the surface. The extent of protrusion is at least twice the average diameter of the nanotubes, advantageously at least ten times the average diameter of the nanotubes.

Article comprising enhanced nanotube emitter structure and process for fabricating article

A process of producing a display operating by cathodoluminescence excited by field emission, including forming parallel cathodes on a glass substrate, depositing a silica coating on the cathodes, then a conductive coating and then producing a matrix of holes in the conductive coating and silica coating, depositing on the perforated conductive coating a fourth coating not covering the holes and then depositing on the complete structure a coating of an electron emitting material, eliminating the fourth coating so as to expose the microemitters, forming in the conductive coating grids crossing the cathodes and placing above the grids an anode covered by a cathodoluminescent coating.

Process for the production of a display means by cathodoluminescence excited by field emission

Procede de fabrication d'un dispositif de visualisation par cathodoluminescence, excite par emission de champ. A method of manufacturing a display device by cathodoluminescence excited by field emission. Ce procede consiste a former des cathodes paralleles (8) sur un substrat en verre (6), deposer une couche en silice (12) sur les cathodes, puis une couche conductrice, realiser une matrice de trous (16) dans la couche conductrice et la couche de silice, deposer sur la couche conductrice percee une quatrieme couche (23) ne recouvrant pas les trous, puis deposer sur l'ensemble de la structure une couche en materiau emetteur d'electrons, eliminer la quatrieme couche afin de mettre a nu les microemetteurs (18), former dans la couche conductrice des grilles (10) croisant les cathodes et disposer au-dessus des grilles une anode (20) recouverte d'une couche (22) cathodoluminescente. This method includes forming parallel cathodes (8) on a glass substrate (6), depositing a silica layer (12) on the cathodes, and a conductive layer, performing a matrix of holes (16) in the conductive layer and the silica layer, depositing on the conductive layer breakthrough a fourth layer (23) not covering the holes, then depositing on the complete structure a layer of electron emitting material, removing the fourth layer to expose the microemetteurs (18) formed in the conductive layer of the gates (10) crossing the cathodes and dispose above the grids an anode (20) covered with a layer (22) cathodoluminescent.

Method of manufacturing an imaging device using field emission cathodoluminescence

Each cathode (5) comprises an electrically conducting layer (22) and microtips (12) and, according to the invention, a continuous resistive layer (24) is provided between the conducting layer and the microtips. The display device comprises a cathodoluminescent anode (16) opposite the source.

Electron source comprising emissive cathodes with microtips, and display device working by cathodoluminescence excited by field emission using this source

La source comprend une serie d'electrodes (5) jouant le role de conducteurs cathodiques et portant des micropointes (12) et une serie d'electrodes (10g) jouant le role de grilles, chacune des electrodes de l'une des serie etant en contact avec une couche resistive (7) et possedant une structure en treillis, comportant ainsi des pistes (5a) qui se croisent et delimitent des premieres ouvertures (6), chacune des electrodes de l'autre serie comportant des deuxiemes ouvertures (11) decalees par rapport aux premieres.

Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.

Jean-Francois Boronat

Papers

Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source

Process for the production of a display means by cathodoluminescence excited by field emission

Method of manufacturing an imaging device using field emission cathodoluminescence

Electron source comprising emissive cathodes with microtips, and display device working by cathodoluminescence excited by field emission using this source

Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.